Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (t
ON
: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and military
applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411, DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FEATURES
•
Halogen-free according to IEC 61249-2-21
Definition
• 44 V supply max. rating
• ± 15 V analog signal range
• On-resistance - R
DS(on)
: 25
• Fast switching - t
ON
: 110 ns
• Ultra low power - P
D
: 0.35 µW
• TTL, CMOS compatible
• Single supply capability
•
Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
Widest dynamic range
• Low signal errors and distortion
• Break-bevor-make switching action
• Simple interfacing
APPLICATIONS
•
•
•
•
•
Precision automatic test equipment
Precision data acquisition
Communication systems
Battery powered systems
Computer peripherals
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top V iew
16 IN
2
15 D
2
14 S
2
13 V+
12 V
L
11 S
3
10 D
3
9
IN
3
S
1
V-
NC
GND
S
4
Key
4
5
6
7
8
9
10
11
12
13
3
2
DG411
LCC
D
1
IN
1
NC IN
2
D
2
1
20
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
TRUTH TABLE
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
DG411
ON
OFF
DG412
OFF
ON
D
4
IN
4
NC IN
3
D
3
Top View
DG413
Dual-In-Line and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top V iew
16 IN
2
15 D
2
14 S
2
13 V+
12 V
L
11 S
3
S
4
10 D
3
9
IN
3
9
D
4
10
Key
4
5
6
7
8
D
1
3
S
1
V-
NC
GND
2
DG413
LCC
IN
1
NC IN
2
1
20
D
2
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
TRUTH TABLE
Logic
0
1
Logic “0”
0.8
V
Logic “1”
2.4
V
SW
1
, SW
4
OFF
ON
SW
2
, SW
3
ON
OFF
11
12
13
D
3
IN
4
NC IN
3
Top View
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG411DJ
DG411DJ-E3
DG412DJ
DG412DJ-E3
DG413DJ
DG413DJ-E3
DG411DY
DG411DY-E3
DG411DY-T1
DG411DY-T1-E3
DG412DY
DG412DY-E3
DG412DY-T1
DG412DY-T1-E3
DG413DY
DG413DY-E3
DG413DY-T1
DG413DY-T1-E3
DG411DQ-E3
DG411DQ-T1-E3
16-pin TSSOP
DG412DQ-E3
DG412DQ-T1-E3
DG413DQ-E3
DG413DQ-T1-E3
16-pin plastic DIP
- 40 °C to 85 °C
16-pin narrow SOIC
ABSOLUTE MAXIMUM RATINGS
Parameter
V + to V -
GND to V -
V
L
Digital Inputs
a
, V
S
, V
D
Continuous Current (Any terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
(AK, AZ suffix)
(DJ, DY suffix)
16-pin plastic DIP
c
Power Dissipation (Package)
b
16-pin narrow SOIC
16-pin CerDIP
LCC-20
e
e
d
Limit
44
25
(GND - 0.3) to (V+) + 0.3
(V-) -2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
- 65 to 125
470
600
900
900
Unit
V
mA
°C
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Specified
V + = 15 V, V - = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix
- 55 °C to 125 °C
Temp.
b
Full
V + = 13.5 V, V - = - 13.5 V
I
S
= - 10 mA, V
D
=
±
8.5 V
V + = 16.5, V - = - 16.5 V
V
D
=
±
15.5 V, V
S
=
±
15.5 V
V + = 16.5 V, V - = - 16.5 V
V
S
= V
D
=
±
15.5 V
V
IN
under test = 0.8 V
V
IN
under test = 2.4 V
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
f = 1 MHz
Room
Room
25
Typ.
c
Min.
d
- 15
Max.
d
15
35
45
0.25
20
0.25
20
0.4
40
0.5
0.5
175
240
145
160
D Suffix
- 40 °C to 85 °C
Min.
d
- 15
Max.
d
15
35
45
0.25
5
0.25
5
0.4
10
0.5
0.5
175
220
145
160
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Switch Off Leakage
Current
Channel On Leakage
Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
e
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On
Capacitance
e
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Symbol
V
ANALOG
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
I
IL
I
IH
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
±
0.1
±
0.1
±
0.1
- 0.25
- 20
- 0.25
- 20
- 0.4
- 40
- 0.5
- 0.5
- 0.25
-5
- 0.25
-5
- 0.4
- 10
- 0.5
- 0.5
nA
0.005
0.005
110
100
25
5
68
85
9
9
35
µA
R
L
= 300
,
C
L
= 35 pF
V
S
=
±
10 V, see figure 2
DG413 only, V
S
= 10 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
C
L
= 10 nF
R
L
= 50
C
L
= 5 pF,
f = 1 MHz
ns
pC
dB
pF
I+
I-
I
L
I
GND
V + = 16.5 V, V - = - 16.5 V
V
IN
= 0 V or 5 V
Room
Full
Room
Full
Room
Full
Room
Full
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
µA
1
5
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
SPECIFICATIONS
a
(for Unipolar Supplies)
Parameter
Analog Switch
V
ANALOG
Analog Signal Range
e
Drain-Source
R
DS(on)
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
V + = 13.5 V, V
IN
= 0 V or 5 V
I
L
I
GND
Room
Hot
Room
Hot
Room
Hot
Room
Hot
0.0001
- 0.0001
0.0001
- 0.0001
-1
-5
-1
-5
1
5
-5
1
5
-1
-5
1
5
1
5
µA
t
ON
t
OFF
t
D
Q
Full
V + = 10.8 V,
I
S
= - 10 mA, V
D
=
3
V, 8 V
Room
Full
Room
Hot
Room
Hot
Room
Room
40
12
80
100
250
400
125
140
12
80
100
250
315
125
140
V
Symbol
Test Conditions
Unless Specified
V + = 12 V, V - = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
- 55 °C to 125 °C
Min.
d
D Suffix
- 40 °C to 85 °C
Min.
d
Unit
Max.
d
Max.
d
175
95
25
25
R
L
= 300
,
C
L
= 35 pF
V
S
=
8
V, see figure 2
DG413 only, V
S
= 8 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 6 V, R
g
= 0
,
C
L
= 10 nF
ns
pC
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
300
T
A
= 25 °C
±5
V
250
V+ = 3 V
V
L
= 3 V
V
L
= 5 V
R
DS(on)
- Drain-Source On-Resistance (Ω)
45
40
35
30
25
20
15
10
5
0
- 20
±
8V
± 10
V
± 15
V
± 12
V
200
150
V
V+ = 5 V
100
± 20
V
50
8V
12 V
15 V
20 V
0
- 15
- 10
-5
0
5
10
15
20
0
2
4
V
D
- Drain
V
oltage (V)
6
8
10 12 14
V
D
- Drain Voltage (V)
16
18
20
On-Resistance vs. V
D
and Power Supply Voltage
On-Resistance vs. V
D
and Unipolar Supply Voltage
www.vishay.com
4
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V+ = 15 V
V- = - 15 V
V
L
= 5 V
T
A
= 25 °C
R
DS(on)
- Drain-Source On-Resistance ()
30
20
10
I
S
, I
D
(pA)
0
- 10
- 20
- 30
- 40
- 50
- 60
- 15
- 10
-5
0
5
10
15
V
D
or V
S
- Drain or Source Voltage (V)
I
S(off)
I
D(on)
35
V+ = 15 V
V- = - 15 V
V
L
= 5 V
125 °C
25
85 °C
20
25 °C
15
- 55 °C
10
30
I
D(off)
5
- 15
- 10
-5
0
5
10
15
V
D
- Drain Voltage (V)
Leakage Current vs. Analog Voltage
I
D
, I
S
Leakages vs. Temperature
100
80
60
40
V+ = 15 V
V- = - 15 V
V
L
= 5 V
140
120
100
80
60
C
L
= 10 nF
Q (pC)
V+ = 15 V
V- = - 15 V
V
L
= 5 V
C
L
= 10 nF
Q (pC)
20
0
- 20
- 40
- 60
- 15
C
L
= 1 nF
40
20
0
- 20
- 40
C
L
= 1 nF
- 10
-5
0
5
V
S
- Source Voltage (V)
10
15
- 60
- 15
- 10
-5
0
5
10
15
V
D
- Drain Voltage (V)
Charge Injection vs. Analog Voltage
3.5
3.0
2.5
Charge Injection vs. Analog Voltage
240
210
180
t
ON
, t
OFF
(ns)
V+ = 15 V
V- = - 15 V
V
L
= 5 V
V
S
= 10 V
V
L
= 7.5 V
150
t
ON
120
t
OFF
90
60
30
0
- 55 - 35
V
TH
(V)
2.0
6.5 V
1.5
1.0
0.5
0
5
10
15
20
(V+)
25
30
35
40
4.5 V
5.5 V
- 15
5
25
45
65
85
105 125
Temperature (°C)
Input Switching Threshold vs. Supply Voltage
Switching Time vs. Temperature
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
We mainly design and process electromagnetic interference from hardware and software aspects. The following is an introduction to the processing of electromagnetic compatibility from the PCB design of...
[i=s]This post was last edited by damiaa on 2018-12-30 16:51[/i] [b]【NXP Rapid IoT Review】+Start Trial[/b] [b]I finally received the RAPID IOT board last night, it’s great! [/b]Small, but said to be p...
library ieee;
use ieee.std_logic_1164.all;
use ieee.std_logic_unsigned .all;
entity liushuideng is
port(clk:in std_logic;
led:out std_logic_vector(7 downto 0));
end entity;
architecture bhv of liushui...
I have a question for you all, what protocol does the POS receipt printer use?
I recently worked on a project in which I used STM32F407 to receive printer data captured by a USB packet capture module ...
TL494 controls the generation of PWM waves to control the switching of the power tube, but the phases of pins 8 and 11 are not the same when outputting (pin 13 is connected to a low level), pin 8 has ...
As early as 2019, when the collaborative robot market was just beginning to emerge, COVAL launched the first CVGC carbon vacuum gripper designed specifically for collaborative robots. Now, in the c...[Details]
The TOPSwitch-JX series TOP266EG is a cost-effective device that integrates a 725V power
MOSFET
, a high-voltage switch
current
source, a multi-mode PWM control, an oscillator, ...[Details]
Magnetic flap level gauges are widely used in liquid level measurement of tanks, tanks and other containers. As a common liquid level measuring instrument, it is favored by users for its simple struc...[Details]
OFweek Cup · OFweek 2023 China
Robot
Industry Annual Selection (abbreviated as OFweek Robot Awards 2023) is jointly organized by OFweek, China's high-tech industry portal, and its authorita...[Details]
Yole Developpement said that by 2026, the market size of gas and particle sensors will reach US$2.2 billion, of which the gas sensor market will reach US$1.8 billion in revenue, with a compound annua...[Details]
1.2.3 Verification of image processing algorithm accuracy
In order to verify the accuracy of the image processing algorithm, a laser ranging sensor was used to accurately locate the actual posi...[Details]
Most of the acquisition systems used in PCs used ISA bus structure in the past. The biggest disadvantage of this structure is the low transmission rate, which cannot realize the real-time tra...[Details]
Require 1. Complete the application design in Keil IDE (u Vision2) and compile 2. Complete circuit design, debugging and simulation in ISIS 7 Professional /** I use a timer in my code to control...[Details]
The development direction of power supply can be summarized into three aspects: first, miniaturization; second, high efficiency and high reliability; third, intelligence or digitization. Among them...[Details]
The battle against the epidemic is at a critical stage. In order to prevent the spread of the virus, avoiding close contact between people has become a key epidemic prevention measure. In public plac...[Details]
The battery
technology in
today's portable
electronic
devices
includes
several aspects, such as
power detection algorithm,
battery
charging
algorithm and battery
c...[Details]
When debugging high-speed signals, engineers must first debug and verify whether their designs meet physical layer specifications. At this stage, signal integrity (such as eye diagrams and jitter) i...[Details]
The author designed a voice temperature measurement system based on the single-chip microcomputer STC89C52RC, DS18B20 temperature sensor and voice chip ISD1730, and gave the detailed design process...[Details]
Since computers can only recognize binary numbers, computer instructions are composed of binary codes. For the convenience of reading and writing, it is often written in hexadecimal form, and such in...[Details]
A converter is a device that converts one signal into another. A signal is a form or carrier of information. In automated instrumentation and automatic control systems, one signal is often converte...[Details]
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
