CY7C1418KV18-250BZCT datasheet, PDF

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CY7C1418KV18-250BZCT: DescriptionSRAM 36Mb 1.8V 250Mhz 2M x 18 DDR II SRAM; Categorystorage storage; File Size540KB，32 Pages; ManufacturerCypress Semiconductor

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CY7C1418KV18-250BZCT Overview

SRAM 36Mb 1.8V 250Mhz 2M x 18 DDR II SRAM

CY7C1418KV18-250BZCT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
package instruction	LBGA, BGA165,11X15,40
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	250 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e0
length	15 mm
memory density	37748736 bit
Memory IC Type	STANDARD SRAM
memory width	18
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	235
power supply	1.5/1.8,1.8 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum standby current	0.26 A
Minimum standby current	1.7 V
Maximum slew rate	0.43 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	13 mm

CY7C1418KV18-250BZCT Related Products

	CY7C1418KV18-250BZCT	CY7C1418KV18-333BZC
Description	SRAM 36Mb 1.8V 250Mhz 2M x 18 DDR II SRAM	SRAM 36MB (2Mx18) 1.8v 333MHz DDR II SRAM
Is it Rohs certified?	incompatible	incompatible
package instruction	LBGA, BGA165,11X15,40	LBGA, BGA165,11X15,40
Reach Compliance Code	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A
Maximum access time	0.45 ns	0.45 ns
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	250 MHz	333 MHz
I/O type	COMMON	COMMON
JESD-30 code	R-PBGA-B165	R-PBGA-B165
JESD-609 code	e0	e0
length	15 mm	15 mm
memory density	37748736 bit	37748736 bit
Memory IC Type	STANDARD SRAM	DDR SRAM
memory width	18	18
Humidity sensitivity level	3	3
Number of functions	1	1
Number of terminals	165	165
word count	2097152 words	2097152 words
character code	2000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	2MX18	2MX18
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LBGA	LBGA
Encapsulate equivalent code	BGA165,11X15,40	BGA165,11X15,40
Package shape	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	235	235
power supply	1.5/1.8,1.8 V	1.5/1.8,1.8 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	1.4 mm	1.4 mm
Maximum standby current	0.26 A	0.28 A
Minimum standby current	1.7 V	1.7 V
Maximum slew rate	0.43 mA	0.49 mA
Maximum supply voltage (Vsup)	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL
Terminal pitch	1 mm	1 mm
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	20
width	13 mm	13 mm

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