HERAF807G datasheet, PDF - EEWORLD Datasheet

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HERAF807G: Description8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC; CategoryDiscrete semiconductor diode; File Size204KB，2 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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HERAF807G Overview

8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC

HERAF807G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	GREEN, PLASTIC, ITO-220AC, 2 PIN
Reach Compliance Code	compli
Other features	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JEDEC-95 code	TO-220AC
JESD-30 code	R-PSFM-T2
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.08 µs
surface mount	NO
Terminal surface	Pure Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Base Number Matches	1

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HERAF801G - HERAF808G

Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers

ITO-220AC

.185(4.7)

.173(4.4)

.124(3.16)

.118(3.00)

.406(10.3)

.390(9.90)

.134(3.4)DIA

.113(3.0)DIA

.272(6.9)

.248(6.3)

.112(2.85)

.100(2.55)

Features

Glass passivated chip junction.

High efficiency, Low VF

High current capability

High reliability

High surge current capability

For use in low voltage, high frequency inventor, free

wheeling, and polarity protection application.

.606(15.5)

.583(14.8)

.063(1.6)

MAX

.161(4.1)

.146(3.7)

.110(2.8)

.098(2.5)

.030(0.76)

.020(0.50)

.055(1.4)

.043(1.1)

.035(0.9)

.020(0.5)

.071(1.8)

MAX

.543(13.8)

.512(13.2)

Mechanical Data

Cases: ITO-220AC molded plastic

Epoxy: UL 94V0 rate flame retardant

Terminals: Pure tin plated, lead free solderable per

MIL-STD-202, Method 208 guaranteed

Polarity: As marked

High temperature soldering guaranteed:

260 C/ 0.25” (6.35mm) from case for 10

seconds

Mounting torque: 5 in – 1bs. Max.

Weight: 2.24 grams

.100(2.55)

PIN 1

PIN 2

CASE

Case Positive

Dimensions in inches and (millimeters)

Maximum Rating and Electrical Characteristics

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current .375”(9.5mm) Lead Length

=100 C

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@8.0A

Maximum DC Reverse Current @ T

=25

at Rated DC Blocking Voltage @ T

=125

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance

Operating Temperature Range

( Note 2 )

Typical Thermal resistance (Note 3)

Symbol

RRM

RMS

(AV)

FSM

Trr

HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF

801G

802G

803G

804G

805G

806G

807G

808G

Units

100

200

140

200

300

210

300

400

280

400

600

420

600

800 1000

560 700

800 1000

8.0

150

1.0

1.3

400

2.0

-65 to +150

1.7

C/W

θJC

Storage Temperature Range

STG

Notes:

1. Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.

Version: A06

HERAF807G Related Products

	HERAF807G	HERAF801G_1	HERAF803G	HERAF806G	HERAF805G
Description	8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC	8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC	8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC	8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC	8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC
Is it Rohs certified?	conform to	-	conform to	conform to	conform to
package instruction	GREEN, PLASTIC, ITO-220AC, 2 PIN	-	R-PSFM-T2	GREEN, PLASTIC, ITO-220AC, 2 PIN	R-PSFM-T2
Reach Compliance Code	compli	-	compli	compli	compli
Other features	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED	-	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED	FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED
application	EFFICIENCY	-	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	-	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V	-	1 V	1.7 V	1.3 V
JEDEC-95 code	TO-220AC	-	TO-220AC	TO-220AC	TO-220AC
JESD-30 code	R-PSFM-T2	-	R-PSFM-T2	R-PSFM-T2	R-PSFM-T2
Humidity sensitivity level	1	-	1	1	1
Maximum non-repetitive peak forward current	150 A	-	150 A	150 A	150 A
Number of components	1	-	1	1	1
Phase	1	-	1	1	1
Number of terminals	2	-	2	2	2
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-	-65 °C	-65 °C	-65 °C
Maximum output current	8 A	-	8 A	8 A	8 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	-	200 V	600 V	400 V
Maximum reverse recovery time	0.08 µs	-	0.05 µs	0.08 µs	0.05 µs
surface mount	NO	-	NO	NO	NO
Terminal surface	Pure Tin (Sn)	-	Pure Tin (Sn)	Pure Tin (Sn)	Pure Tin (Sn)
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE

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