HiPerFET
TM
Power MOSFETs
IXFN 26N90
Single Die MOSFET
IXFN 25N90
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
G
D
V
DSS
900 V
900 V
I
D (cont)
26 A
25 A
R
DS(on)
0.30
W
0.33
W
t
rr
250 ns
250 ns
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
J
V
ISOL
M
d
Weight
Symbol
Test Conditions
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
£
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
26N90
25N90
26N90
25N90
26N90
25N90
S
S
Maximum Ratings
900
900
±20
±30
26
25
104
100
26
25
64
3
5
600
-55 ... +150
150
-55 ... +150
-
2500
3000
V
V
V
V
A
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
Features
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
•
International standard package
•
miniBLOC, with Aluminium nitride
•
•
•
•
•
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Applications
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
900
3.0
5.0
±200
T
J
= 25°C
T
J
= 125°C
26N90
25N90
100
2
0.30
0.33
V
V
nA
mA
mA
W
W
•
DC-DC converters
•
Battery chargers
•
Switched-mode and resonant-mode
power supplies
•
DC choppers
•
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
V
DS
V
GS
=
±20
V
DC
, V
DS
= 0
= 0.8 • V
DSS
=0V
Advantages
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
•
Easy to mount
•
Space savings
•
High power density
97526E (10/99)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXFN 25N90
IXFN 26N90
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
18
28
8.7
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
60
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
W
(External)
35
130
24
240
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
56
107
10.8
375
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.21 K/W
0.05
K/W
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
miniBLOC, SOT-227 B
g
fs
C
0
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
800 1000
25.07 0.968
0.1 -0.002
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
26N90
25N90
26N90
25N90
26
25
104
100
1.5
250
1.4
10
A
A
V
ns
mC
A
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= I
S
, -di/dt = 100 A/ms, V
R
= 100 V
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFN 25N90
IXFN 26N90
Figure 1. Output Characteristics at 25
O
C
20
TJ = 25°C
VGS = 9V
8V
7V
Figure 2. Extended Output Characteristics at 125
O
C
50
40
TJ = 25°C
VGS = 9V
8V
7V
6V
15
I
D
- Amperes
I
D
- Amperes
6V
5V
30
20
5V
10
5
4V
10
4V
0
0
0
2
4
6
8
10
0
4
8
12
16
20
V
DS
- Volts
V
CE
- Volts
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
30
25
TJ = 125°C
VGS = 9V
8V
7V
Figure 4. Admittance Curves
30
25
6V
I
D
- Amperes
I
D
- Amperes
20
15
10
5
0
5V
20
T
J
= 125
O
C
15
10
5
0
T
J
= 25
O
C
4V
0
5
10
15
20
25
2
3
4
5
6
7
V
DS
- Volts
V
GS
- Volts
Figure 5. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
2.4
2.2
R
DS(ON)
- Normalized
R
DS(ON)
- Normalized
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
20
30
40
50
TJ = 25°C
TJ = 125°C
VGS = 10V
Figure 6. R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
ID = 13A
VGS = 10V
ID = 26A
I
D
- Amperes
T
J
- Degrees C
© 2000 IXYS All rights reserved
3-4
IXFN 25N90
IXFN 26N90
Figure 7. Gate Charge
15
12
VDS = 500 V
ID = 13 A
IG = 10 mA
Figure 8. Capacitance Curves
20000
10000
Ciss
Capacitance - pF
f = 1MHz
Coss
V
GS
- Volts
9
6
3
0
1000
Crss
100
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
35
40
Gate Charge - nC
V
DS
- Volts
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Capacitance Curves
50
45
40
35
Figure10. Drain Current vs. Case Temperature
30
25
IXFN25N90
IXFN26N90
I
D
- Amperes
30
25
20
15
10
5
0
TJ = 125oC
TJ = 25oC
I
D
- Amperes
1.5
20
15
10
5
0
-50
0.0
0.3
0.6
0.9
1.2
-25
0
25
50
75
100
125
150
V
SD
- Volts
Case Temperatue -
o
C
Figure 11. Transient Thermal Resistance
0. 300
0.100
R(th)
JC
- K/W
0.010
0.001
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4
RF/Wirelessly
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