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BSP92P L6327

Description
MOSFET P-Ch -250V 260mA SOT-223-3
Categorysemiconductor    Discrete semiconductor   
File Size445KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP92P L6327 Overview

MOSFET P-Ch -250V 260mA SOT-223-3

BSP92P L6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologyGaN
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 250 V
Id - Continuous Drain Current- 260 mA
Rds On - Drain-Source Resistance12 Ohms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Dual Drain
Pd - Power Dissipation1.8 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height1.6 mm
Length6.5 mm
ProductMOSFET Small Signal
Transistor Type1 P-Channel
Width3.5 mm
Fall Time6 ns
Rise Time6 ns
Factory Pack Quantity1000
Typical Turn-Off Delay Time67 ns
Typical Turn-On Delay Time5 ns
Unit Weight0.003951 oz

BSP92P L6327 Related Products

BSP92P L6327 BSP92PH6327XTSA1 BSP92P H6327
Description MOSFET P-Ch -250V 260mA SOT-223-3 MOSFET P-Ch -250V -260mA SOT-223-4 MOSFET P-Ch -250V -260mA SOT-223-4
Configuration Single Dual Drain SINGLE WITH BUILT-IN DIODE Single
Product Category MOSFET - MOSFET
Rise Time 6 ns - 6 ns
Maker - Infineon Infineon
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