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BSP92PH6327XTSA1

Description
MOSFET P-Ch -250V -260mA SOT-223-4
CategoryDiscrete semiconductor    The transistor   
File Size445KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP92PH6327XTSA1 Overview

MOSFET P-Ch -250V -260mA SOT-223-4

BSP92PH6327XTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)0.26 A
Maximum drain-source on-resistance12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)1.04 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

BSP92PH6327XTSA1 Related Products

BSP92PH6327XTSA1 BSP92P L6327 BSP92P H6327
Description MOSFET P-Ch -250V -260mA SOT-223-4 MOSFET P-Ch -250V 260mA SOT-223-3 MOSFET P-Ch -250V -260mA SOT-223-4
Configuration SINGLE WITH BUILT-IN DIODE Single Dual Drain Single
Maker Infineon - Infineon
Product Category - MOSFET MOSFET
Rise Time - 6 ns 6 ns

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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