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BSP92P H6327

Description
MOSFET P-Ch -250V -260mA SOT-223-4
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size445KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP92P H6327 Overview

MOSFET P-Ch -250V -260mA SOT-223-4

BSP92P H6327 Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxSOT-223-4
Number of channels1 Channel
Transistor polarityP-Channel
Vds - drain-source breakdown voltage250 V
Id-continuous drain current260 mA
Rds On - drain-source on-resistance7.5 Ohms
Vgs th-gate-source threshold voltage2 V
Vgs - gate-source voltage20 V
Qg-gate charge- 5.4 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation1.8 W
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
high1.6 mm
length6.5 mm
seriesBSP92
Transistor type1 P-Channel
width3.5 mm
Forward transconductance - minimum290 mS
Fall time33 ns
Rise Time6 ns
Factory packaging quantity1000
Typical shutdown delay time67 ns
Typical switch-on delay time5 ns
unit weight112 mg

BSP92P H6327 Related Products

BSP92P H6327 BSP92P L6327 BSP92PH6327XTSA1
Description MOSFET P-Ch -250V -260mA SOT-223-4 MOSFET P-Ch -250V 260mA SOT-223-3 MOSFET P-Ch -250V -260mA SOT-223-4
Configuration Single Single Dual Drain SINGLE WITH BUILT-IN DIODE
Maker Infineon - Infineon
Product Category MOSFET MOSFET -
Rise Time 6 ns 6 ns -
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