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IPB050N06LG

Description
OptiMOS㈢ Power-Transistor
File Size440KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPB050N06LG Overview

OptiMOS㈢ Power-Transistor

IPP050N06N G
IPB050N06N G
OptiMOS
®
Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
SMDversion
60
4.7
100
V
mΩ
A
Type
IPP050N06L
IPB050N06L
Package
Marking
P-TO220-3-1
050N06L
P-TO263-3-2
050N06L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
1)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
100
100
400
810
6
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
2)
I
D
=100 A,
R
GS
=25
I
D
=100 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
W
°C
T
C
=25 °C
300
-55 ... 175
55/175/56
Current is limited by bondwire; with an R
thJC
=0.5 the chip is able to carry 160A
See figure 3
Rev. 1.11
page 1
2006-07-06

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Description OptiMOS㈢ Power-Transistor OptiMOS㈢ Power-Transistor OptiMOS㈢ Power-Transistor OptiMOS㈢ Power-Transistor OptiMOS㈢ Power-Transistor
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