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SI4848DY

Description
MOSFET 150V Vds 20V Vgs SO-8
CategoryDiscrete semiconductor    The transistor   
File Size176KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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MOSFET 150V Vds 20V Vgs SO-8

SI4848DY Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)2.7 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Si4848DY
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
R
DS(on)
(Ω)
0.085 at V
GS
= 10 V
0.095 at V
GS
= 6.0 V
I
D
(A)
3.7
3.5
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
D
SO-8
S
S
S
G
1
2
3
4
Top View
S
8
7
6
5
D
D
G
D
D
Ordering Information:
Si4848DY-T1-E3
(Lead (Pb)-free)
Si4848DY-T1-GE3
(Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
I
S
P
D
T
J
, T
stg
2.5
3.0
1.9
- 55 to 150
3.7
3.0
25
10
1.3
1.5
1.0
W
°C
10 s
150
± 20
2.7
2.1
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
35
68
18
Maximum
42
82
23
°C/W
Unit
Document Number: 71356
S09-0870-Rev. C, 18-May-09
www.vishay.com
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