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AUIRFR1018ETR

Description
MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
CategoryDiscrete semiconductor    The transistor   
File Size604KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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AUIRFR1018ETR Overview

MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms

AUIRFR1018ETR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionROHS COMPLIANT, PLASTIC, DPAK-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)88 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)79 A
Maximum drain current (ID)56 A
Maximum drain-source on-resistance0.0084 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)110 W
Maximum pulsed drain current (IDM)315 A
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
 
AUTOMOTIVE GRADE
AUIRFR1018E
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
60V
7.1m
8.4m
79A
56A
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
D-Pak
AUIRFR1018E
G
Gate
D
Drain
S
Source
Base part number
AUIRFR1018E
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFR1018E
AUIRFR1018ETRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Pead Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
79
56
56
315
110
0.76
± 20
88
47
11
21
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
 
°C 
 
Thermal Resistance
 
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.32
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-19

AUIRFR1018ETR Related Products

AUIRFR1018ETR AUIRFR1018ETRL
Description MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction ROHS COMPLIANT, PLASTIC, DPAK-3 ROHS COMPLIANT, PLASTIC, DPAK-3
Reach Compliance Code compliant not_compliant
ECCN code EAR99 EAR99
Other features ULTRA-LOW RESISTANCE ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 88 mJ 88 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 79 A 79 A
Maximum drain current (ID) 56 A 56 A
Maximum drain-source on-resistance 0.0084 Ω 0.0084 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 110 W 110 W
Maximum pulsed drain current (IDM) 315 A 315 A
surface mount YES YES
Terminal surface MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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