70T3339S133BCI datasheet, PDF - EEWORLD Datasheet

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70T3339S133BCI: DescriptionSRAM 512K X 18 DP; Categorystorage storage; File Size329KB，28 Pages; ManufacturerIDT (Integrated Device Technology)

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70T3339S133BCI Overview

SRAM 512K X 18 DP

70T3339S133BCI Parametric

Parameter Name	Attribute value
Brand Name	Integrated Device Technology
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	CABGA
package instruction	LBGA, BGA256,16X16,40
Contacts	256
Manufacturer packaging code	BC256
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Samacsys Description	CHIP ARRAY BGA 17.0 X 1.7.0 MM X 1.0 MM
Maximum access time	15 ns
Other features	FLOW-THROUGH OR PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	S-PBGA-B256
JESD-609 code	e0
length	17 mm
memory density	9437184 bit
Memory IC Type	DUAL-PORT SRAM
memory width	18
Humidity sensitivity level	3
Number of functions	1
Number of ports	2
Number of terminals	256
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA256,16X16,40
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	2.5,2.5/3.3 V
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum standby current	0.02 A
Minimum standby current	2.4 V
Maximum slew rate	0.45 mA
Maximum supply voltage (Vsup)	2.6 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn63Pb37)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	17 mm
Base Number Matches	1

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