TC74AC393P/F/FN/FT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74AC393P,TC74AC393F,TC74AC393FN,TC74AC393FT
Dual Binary Counter
Note:
The TC74AC393 is an advanced high speed CMOS 4-BIT
BINARY COUNTER fabricated with silicon gate and
double-layer metal wiring C
2
MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
It contains two independent counter circuits in one package, so
that counting or frequency division of eight binary bits can be
achieved with one IC.
This device changes state on the negative going transition of
the
CLOCK
pulse. The counter can be reset to “0” (QA to QD =
“L”) by a high at the CLEAR input regardless of other inputs.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
xxxFN (JEDEC SOP) is not available in
Japan.
TC74AC393P
TC74AC393F
Features
•
•
•
•
High speed: f
max
=
180 MHz (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
8
μA
(max) at Ta
=
25°C
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Symmetrical output impedance: |I
OH
|
=
I
OL
=
24 mA (min)
Capability of driving 50
Ω
transmission lines.
Balanced propagation delays: t
pLH
∼
t
pHL
−
Wide operating voltage range: V
CC (opr)
=
2 to 5.5 V
Pin and function compatible with 74F393
TC74AC393FN
•
•
•
TC74AC393FT
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
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2007-10-01
TC74AC393P/F/FN/FT
Pin Assignment
IEC Logic Symbol
1CK
1CLR
1QA
1QB
1QC
1QD
GND
1
2
3
4
5
6
7
(top view)
14
13
12
11
10
9
8
V
CC
1CLR
1CK
2CLR
2CK
(2)
(1)
(12)
(13)
2CK
2CLR
2QA
2QB
2QC
2QD
CTRDIV 16 0
CT = 0
CT
+
3
(3)
(4)
(5)
(6)
(11)
(10)
(9)
(8)
1QA
1QB
1QC
1QD
2QA
2QB
2QC
2QD
Truth Table
Inputs
Outputs
CK
X
CLR
H
L
L
QA
L
QB
L
QC
L
QD
L
Count Up
No Change
X: Don’t care
Timing Chart
CK
CLR
QA
QB
QC
QD
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2007-10-01
TC74AC393P/F/FN/FT
System Diagram
D
D
CK Q
R
D
CK Q
R
D
CK Q
R
CK
1/13
CK Q
R
CLR
2/12
3/11
QA
4/10
QB
5/9
QC
6/8
QD
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7.0
−0.5
to V
CC
+ 0.5
−0.5
to V
CC
+ 0.5
±20
±50
±50
±200
500 (DIP) (Note 2)/180 (SOP/TSSOP)
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta =
−40
to 65°C. From Ta = 65 to 85°C a derating factor of
−10
mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dV
Rating
2.0 to 5.5
0 to V
CC
0 to V
CC
−40
to 85
0 to 100 (V
CC
= 3.3 ± 0.3 V)
0 to 20 (V
CC
= 5 ± 0.5 V)
Unit
V
V
V
°C
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
3
2007-10-01
TC74AC393P/F/FN/FT
Electrical Characteristics
DC Characteristics
Test Condition
Characteristics
Symbol
V
CC
(V)
2.0
High-level input
voltage
V
IH
―
3.0
5.5
2.0
Low-level input
voltage
V
IL
―
3.0
5.5
2.0
I
OH
=
−50 μA
High-level output
voltage
V
OH
V
IN
= V
IH
or
I
OH
=
−4
mA
V
IL
I
OH
=
−24
mA
I
OH
=
−75
mA
(Note)
3.0
4.5
3.0
4.5
5.5
2.0
I
OL
= 50
μA
Low-level output
voltage
V
OL
V
IN
= V
IH
or
I
OL
= 12 mA
V
IL
I
OL
= 24 mA
I
OL
= 75 mA
Input leakage
current
Quiescent supply
current
I
IN
I
CC
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
(Note)
3.0
4.5
3.0
4.5
5.5
5.5
5.5
Min
1.50
2.10
3.85
―
―
―
1.9
2.9
4.4
2.58
3.94
―
―
―
―
―
―
―
―
―
Ta = 25°C
Typ.
―
―
―
―
―
―
2.0
3.0
4.5
―
―
―
0.0
0.0
0.0
―
―
―
―
―
Max
―
―
―
0.50
0.90
1.65
―
―
―
―
―
―
0.1
0.1
0.1
0.36
0.36
―
±0.1
8.0
Ta =
−40
to 85°C
Min
1.50
2.10
3.85
―
―
―
1.9
2.9
4.4
2.48
3.80
3.85
―
―
―
―
―
―
―
―
Max
―
―
―
0.50
0.90
1.65
―
―
―
―
―
―
0.1
0.1
0.1
0.44
0.44
1.65
±1.0
80.0
μA
μA
V
V
V
V
Unit
Note:
This spec indicates the capability of driving 50
Ω
transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
Timing Requirements
(input: t
r
= t
f
= 3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
Minimum pulse width
(
CK
)
Minimum pulse width
(CLR)
Minimum removal time
t
w (H)
t
w (L)
t
w (H)
―
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
Ta =
25°C
Limit
7.0
5.0
7.0
5.0
6.0
3.0
Ta =
−40
to
85°C
Limit
7.0
5.0
7.0
5.0
6.0
3.0
ns
Unit
―
ns
t
rem
―
ns
4
2007-10-01
TC74AC393P/F/FN/FT
AC Characteristics
(C
L
= 50 pF, R
L
= 500
Ω,
input: t
r
= t
f
= 3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
Propagation delay
time
(
CK - QA
)
Propagation delay
time
(
CK - QB
)
Propagation delay
time
(
CK - QC
)
Propagation delay
time
(
CK - QD
)
Propagation delay
time
(CLR-Q
n
)
Maximum clock
frequency
Input capacitance
Power dissipation
capacitance
f
max
C
IN
C
PD
―
―
(Note)
t
pLH
t
pHL
t
pLH
t
pHL
t
pLH
t
pHL
t
pLH
t
pHL
―
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
3.3 ± 0.3
5.0 ± 0.5
Min
―
―
―
―
―
―
―
―
―
―
65
100
―
―
Ta = 25°C
Typ.
8.0
5.0
10.1
5.9
12.0
6.8
13.0
7.5
8.0
5.1
125
160
5
36
Max
13.2
8.3
16.7
10.5
20.2
12.3
23.0
13.2
13.2
8.8
―
―
10
―
Ta =
−40
to 85°C
Min
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
65
100
―
―
Max
15.0
9.5
19.0
12.0
23.0
14.0
26.0
15.0
15.0
10.0
―
―
10
―
ns
Unit
―
ns
―
ns
―
ns
t
pHL
―
ns
MHz
pF
pF
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
= C
PD
·V
CC
·f
IN
+ I
CC
/2 (per counter)
5
2007-10-01
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