6A60GB0G datasheet, PDF - EEWORLD Datasheet

6A60GB0G: DescriptionRectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size191KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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6A60GB0G Overview

Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Maximum non-repetitive peak forward current	250 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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