IRFSL42N20D datasheet, PDF - EEWORLD Datasheet

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IRFSL42N20D: DescriptionHigh frequency DC-DC converters; CategoryDiscrete semiconductor The transistor; File Size69KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFSL42N20D Overview

High frequency DC-DC converters

IRFSL42N20D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	42.6 A
Maximum drain current (ID)	42.6 A
Maximum drain-source on-resistance	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	170 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 94114

PROVISIONAL

SMPS MOSFET

IRFB42N20D

IRFS42N20D

IRFSL42N20D

HEXFET

Power MOSFET

Applications

High frequency DC-DC converters

DSS

200V

DS(on)

max

0.055Ω

42.6A

Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

TO-220AB

Fully Characterized Avalanche Voltage

IRFB42N20D

and Current

Pak

IRFS42N20D

TO-262

IRFSL42N20D

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

Max.

42.6

170

3.8

300

± 30

TBD

-55 to + 175

260 (1.6mm from case )

10 lbf•in (1.1N•m)

Units

W/°C

V/ns

°C

Typical SMPS Topologies

Telecom 48V input DC-DC Active Clamp Reset Forward Converter

Notes

through

are on page 6

www.irf.com

03/05/01

IRFSL42N20D Related Products

	IRFSL42N20D	IRFS42N20D
Description	High frequency DC-DC converters	High frequency DC-DC converters
Is it Rohs certified?	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3
Reach Compliance Code	unknow	compliant
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (Abs) (ID)	42.6 A	42.6 A
Maximum drain current (ID)	42.6 A	42.6 A
Maximum drain-source on-resistance	0.055 Ω	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225	225
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	300 W	300 W
Maximum pulsed drain current (IDM)	170 A	170 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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