71258L85CB datasheet, PDF - EEWORLD Datasheet

71258L85CB: DescriptionStandard SRAM, 64KX4, 85ns, CMOS, CDIP24; Categorystorage; File Size360KB，8 Pages; ManufacturerIDT (Integrated Device Technology)

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71258L85CB Overview

Standard SRAM, 64KX4, 85ns, CMOS, CDIP24

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
Maximum access time	85 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T24
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	24
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.0006 A
Minimum standby current	2 V
Maximum slew rate	0.105 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	6
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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