WED3DG6418V-D2
128MB- 16M x 64 SDRAM UNBUFFERED
FEATURES
n
Burst Mode Operation
n
Auto and Self Refresh capability
n
LVTTL compatible inputs and outputs
n
Serial Presence Detect with EEPROM
n
Fully synchronous: All signals are registered on the positive
edge of the system clock
n
Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
n
3.3 volt
6
0.3v Power Supply
n
168- Pin DIMM JEDEC
*
This datasheet describes a product that may or may not be under development
and is subject to change or cancellation without notice.
DESCRIPTION
The WED3DG6418V is a 16Mx64 synchronous DRAM module
which consists of eight 16Mx8 SDRAM components in TSOP- 11
package and one 2K EEPROM in an 8- pin TSSOP package for
Serial Presence Detect which are mounted on a 168 Pin DIMM
multilayer FR4 Substrate.
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Front
VSS
DQ0
DQ1
DQ2
DQ3
VDD
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
DQ9
DQ10
DQ11
DQ12
DQ13
VDD
DQ14
DQ15
*CB0
*CB1
VSS
NC
NC
VDD
WE
DQM0
Pin
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Front
DQM1
CS0
DNU
VSS
A0
A2
A4
A6
A8
A10/AP
BA1
VDD
VDD
CLK0
VSS
DNU
CS2
DQM2
DQM3
DNU
VDD
NC
NC
*CB2
*CB3
VSS
DQ16
DQ17
Pin
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Front
DQ18
DQ19
VDD
DQ20
NC
*VREF
*CKE1
VSS
DQ21
DQ22
DQ23
VSS
DQ24
DQ25
DQ26
DQ27
VDD
DQ28
DQ29
DQ30
DQ31
VSS
CLK2
NC
WP***
**SDA
**SCL
VDD
Pin
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
VSS
DQ32
DQ33
DQ34
DQ35
VDD
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ41
DQ42
DQ43
DQ44
DQ45
VDD
DQ46
DQ47
*CB4
*CB5
VSS
NC
NC
VDD
CAS
DQM4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
CS1
RAS
VSS
A1
A3
A5
A7
A9
BA0
A11
VDD
*CLK1
*A12
VSS
CKE0
*CS3
DQM6
DQM7
*A13
VDD
NC
NC
*CB6
*CB7
VSS
DQ48
DQ49
Pin
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Back
DQ50
DQ51
VDD
DQ52
NC
*VREF
DNU
VSS
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
VDD
DQ60
DQ61
DQ62
DQ63
VSS
*CLK3
NC
**SA0
**SA1
**SA2
VDD
PIN NAMES
A0 A11
BA0-1
DQ0-63
CLK0,CLK2
CKE0
CS0,CS2
RAS
CAS
WE
DQM0-7
VDD
VSS
SDA
SCL
DNU
NC
WP
Address input (Multiplexed)
Select Bank
Data Input/Output
Clock input
Clock Enable input
Chip select Input
Row Address Strobe
Column Address Strobe
Write Enable
DQM
Power Supply (3.3V)
Ground
Serial data I/O
Serial clock
Do not use
No Connect
Write Protect
* These pins are not used in this module.
** These pins should be NC in the system which
does not support SPD.
*** WP available on the WED3DG6318V-D2.
Aug. 2002 Rev. 0
ECO #15455
1
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED3DG6418V-D2
FUNCTIONAL BLOCK DIAGRAM
CS0
DQM0
DQM4
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CS2
DQM2
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U0
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQM5
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U4
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U1
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQM6
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U5
DQM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U2
DQM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQM7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U6
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U3
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS
U7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
SCL
A0
A1
A2
SD
SDA
WP
SA0 SA1 SA2
A0 ~ A11, BA0 & 1
RAS
CAS
WE
CKE0
10Ω
10
DQn
V
DD
Vss
·
·
·
·
SDRAM U0 ~ U7
SDRAM U0 ~ U7
SDRAM U0 ~ U7
SDRAM U0 ~ U7
SDRAM U0 ~ U7
1.5 pF
CLK0/2
10Ω
·
·
U0/U
U0/U2
U4/U6
U1/U3
·
U5/U7
Ever y
Every DQpin of SDRAM
10Ω
CLK1/3
Two
0.1uF Cap
Capacitors
per each SDRAM
To all SDRAMs
10pF
pF
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
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Aug. 2002 Rev. 0
ECO #15455
WED3DG6418V-D2
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Current
Symbol
V
IN
, Vout
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
8
50
Units
V
V
°C
W
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: V
SS
= 0V, T
A
= 0°C to +70°C)
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
VDD
VIH
VIL
VOH
VOL
ILI
Min
3.0
2.0
-0.3
2.4
-10
Typ
Max
Unit
3.3
3.6
V
3.0 VDDQ+0.3 V
0.8
V
V
0.4
V
10
µA
Note
1
2
IOH= -2mA
IOL= -2mA
3
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is
£
3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is
£
3ns.
3. Any input 0V
£
VIN
£
VDDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State
outputs.
CAPACITANCE
(T
A
= 23°C, f = 1MHz, V
DD
= 3.3V, VREF=1.4V
6200mV)
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS,CAS,WE)
Input Capacitance (CKE0)
Input Capacitance (CLK0,CLK2)
Input Capacitance (CS0,CS2)
Input Capacitance (DQM0-DQM7)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
Cout
Min
-
-
-
-
-
-
-
-
Max
45
45
45
20
25
12
45
12
Unit
pF
pF
pF
pF
pF
pF
pF
pF
Aug. 2002 Rev. 0
ECO #15455
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED3DG6418V-D2
OPERATING CURRENT CHARACTERISTICS
(V
CC
= 3.3V, T
A
= 0°C to +70°C)
Parameter
Operating Current
(One bank active)
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non-Power Down Mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
Operating current (Burst mode)
Refresh current
Self refresh current
Symbol
ICC1
ICC2P
ICC2PS
Icc2N
Icc2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
ICC6
Conditions
Burst Length = 1
tRC
³
tRC(min)
IOL = 0mA
CKE
£
VIL(max), tCC = 10ns
CKE & CLK
£
VIL(max), tCC =
¥
CKE
³
VIH(min), CS
³
VIH(min), tcc = 10ns
Input signals are charged one time during 20
CKE
³
VIH(min), CLK
£
VIL(max), tcc =
¥
Input signals are stable
CKE
³
VIL(max), tCC = 10ns
CKE & CLK
£
VIL(max), tcc =
¥
CKE
³
VIH(min), CS
³
VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
CKE
³
VIH(min), CLK
£
VIL(max), tcc =
¥
input signals are stable
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
tRC
³
tRC(min)
CKE
£
0.2V
Version
133
100
960
800
20
20
160
80
40
40
240
200
1040
1760
880
1520
Units Note
mA
1
mA
mA
mA
mA
mA
mA
mA
mA
1
2
20
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
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Aug. 2002 Rev. 0
ECO #15455
WED3DG6418V-D2
ORDERING INFORMATION
Part Number
WED3DG6418V10D2
WED3DG6418V7D2
WED3DG6418V75D2
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
CL=2
CL=3
Part Number
WED3DG6318V10D2
WED3DG6318V7D2
WED3DG6318V75D2
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
CL=2
CL=3
Note: Modules are available in industrial temperature - 40°C to 85°C.
Note: Available with "WP" write protect on pin 81.
PACKAGE DIMENSIONS
5 MAX.
.120
1.200
MAX.
ALL DIMENSIONS ARE IN INCHES
Aug. 2002 Rev. 0
ECO #15455
5
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com