IRF8010S datasheet, PDF - EEWORLD Datasheet

IRF8010S: DescriptionSMPS MOSFET; CategoryDiscrete semiconductor The transistor; File Size223KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRF8010S Overview

SMPS MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	PLASTIC, D2PAK-3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	310 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	80 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	260 W
Maximum pulsed drain current (IDM)	320 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

	IRF8010S	IRF8010STRRPBF
Description	SMPS MOSFET	mosfet N-CH 100v 80a d2pak
Is it Rohs certified?	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	PLASTIC, D2PAK-3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3
Reach Compliance Code	unknow	compliant
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	310 mJ	310 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	75 A	75 A
Maximum drain-source on-resistance	0.015 Ω	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A	320 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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