IRF8010STRRPBF datasheet, PDF - EEWORLD Datasheet

IRF8010STRRPBF: Descriptionmosfet N-CH 100v 80a d2pak; CategoryDiscrete semiconductor The transistor; File Size223KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRF8010STRRPBF Overview

mosfet N-CH 100v 80a d2pak

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	310 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	IRF8010STRRPBF	IRF8010S
Description	mosfet N-CH 100v 80a d2pak	SMPS MOSFET
Is it Rohs certified?	conform to	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2	PLASTIC, D2PAK-3
Contacts	3	3
Reach Compliance Code	compliant	unknow
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	310 mJ	310 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	75 A	75 A
Maximum drain-source on-resistance	0.015 Ω	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e0
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	225
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A	320 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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