ZXMN2A04DN8 datasheet, PDF - EEWORLD Datasheet

ZXMN2A04DN8: Description5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size170KB，7 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZXMN2A04DN8 Overview

5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Parameter Name	Attribute value
Number of terminals	8
Minimum breakdown voltage	20 V
Processing package description	SO-8
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of components	2
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	5.9 A
Maximum drain on-resistance	0.0250 ohm

	ZXMN2A04DN8	ZXMN2A04DN8TC	ZXMN2A04DN8_04
Description	5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals	8	8	8
surface mount	Yes	YES	Yes
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Number of components	2	2	2
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Minimum breakdown voltage	20 V	-	20 V
Processing package description	SO-8	-	SO-8
Lead-free	Yes	-	Yes
EU RoHS regulations	Yes	-	Yes
China RoHS regulations	Yes	-	Yes
state	ACTIVE	-	ACTIVE
packaging shape	RECTANGULAR	-	RECTANGULAR
Package Size	SMALL OUTLINE	-	SMALL OUTLINE
terminal coating	MATTE TIN	-	MATTE TIN
Packaging Materials	PLASTIC/EPOXY	-	PLASTIC/EPOXY
structure	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	-	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Channel type	N-CHANNEL	-	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	-	ENHANCEMENT
Transistor type	GENERAL PURPOSE SMALL SIGNAL	-	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	5.9 A	-	5.9 A
Maximum drain on-resistance	0.0250 ohm	-	0.0250 ohm

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