ZXMN2A04DN8TC datasheet, PDF - EEWORLD Datasheet

ZXMN2A04DN8TC: Description5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size170KB，7 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SO-8
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW THRESHOLD
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	5.9 A
Maximum drain-source on-resistance	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

	ZXMN2A04DN8TC	ZXMN2A04DN8	ZXMN2A04DN8_04
Description	5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	5900 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of components	2	2	2
Number of terminals	8	8	8
surface mount	YES	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Minimum breakdown voltage	-	20 V	20 V
Processing package description	-	SO-8	SO-8
Lead-free	-	Yes	Yes
EU RoHS regulations	-	Yes	Yes
China RoHS regulations	-	Yes	Yes
state	-	ACTIVE	ACTIVE
packaging shape	-	RECTANGULAR	RECTANGULAR
Package Size	-	SMALL OUTLINE	SMALL OUTLINE
terminal coating	-	MATTE TIN	MATTE TIN
Packaging Materials	-	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	-	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Channel type	-	N-CHANNEL	N-CHANNEL
field effect transistor technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	-	ENHANCEMENT	ENHANCEMENT
Transistor type	-	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current	-	5.9 A	5.9 A
Maximum drain on-resistance	-	0.0250 ohm	0.0250 ohm

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