FDS3992_04 datasheet, PDF - EEWORLD Datasheet

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FDS3992_04: Description4.5 A, 100 V, 0.062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size576KB，11 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FDS3992_04 Overview

4.5 A, 100 V, 0.062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

FDS3992_04 Parametric

Parameter Name	Attribute value
Number of terminals	8
Minimum breakdown voltage	100 V
Processing package description	SO-8
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODES
Number of components	2
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	2.5 W
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	4.5 A
Rated avalanche energy	167 mJ
Maximum drain on-resistance	0.0620 ohm

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FDS3992

August 2004

FDS3992

Dual N-Channel PowerTrench

MOSFET

100V, 4.5A, 62mΩ

Features

• r

DS(ON)

= 54mΩ (Typ.), V

= 10V, I

= 4.5A

• Q

(tot) = 11nC (Typ.), V

= 10V

• Low Miller Charge

• Low Q

Body Diode

• Optimized efficiency at high frequencies

• UIS Capability (Single Pulse and Repetitive Pulse)

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

Formerly developmental type 82745

•

Electronic Valve Train Systems

Branding Dash

(1)

(2)

(8)

(7)

(3)

(4)

(6)

(5)

SO-8

MOSFET Maximum Ratings

= 25°C unless otherwise noted

Symbol

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Continuous (T

= 25

C, V

= 10V, R

θJA

= 50

C/W)

Continuous (T

= 100 C, V

= 10V, R

θJA

= 50 C/W)

Pulsed

Single Pulse Avalanche Energy (Note 1)

Total Package Power Dissipation

Derate above 25 C

Operating and Storage Temperature

Parameter

Ratings

100

±20

4.5

2.8

Figure 4

167

2.5

-55 to 150

Units

mW/

, T

STG

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction to Ambient at 10 seconds

(Note 3)

Thermal Resistance, Junction to Ambient at 1000 seconds

(Note 3)

Thermal Resistance, Junction to Case

(Note 2)

C/W

Package Marking and Ordering Information

Device Marking

FDS3992

Device

FDS3992

Package

SO-8

Reel Size

330mm

Tape Width

12mm

Quantity

2500 units

FDS3992 Rev. B1

FDS3992_04 Related Products

	FDS3992_04	FDS3992
Description	4.5 A, 100 V, 0.062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	4.5 A, 100 V, 0.062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Number of terminals	8	8
surface mount	Yes	YES
Terminal form	GULL WING	GULL WING
Terminal location	pair	DUAL
Number of components	2	2
transistor applications	switch	SWITCHING
Transistor component materials	silicon	SILICON

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