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SI4450DY

Description
MOSFET 60V 7.5A 2.5W
CategoryDiscrete semiconductor    The transistor   
File Size80KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI4450DY Overview

MOSFET 60V 7.5A 2.5W

SI4450DY Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)7.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Si4450DY
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
(Ω)
0.024 at V
GS
= 10 V
0.03 at V
GS
= 6.0 V
I
D
(A)
7.5
6.5
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information:
Si4450DY-T1-E3 (Lead (Pb)-free)
Si4450DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
D
D
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
60
± 20
7.5
5.5
50
2.1
2.5
1.6
- 55 to 150
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
thJA
Limit
50
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board, t
10 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70144
S09-0393-Rev. F, 09-Mar-09
www.vishay.com
1

SI4450DY Related Products

SI4450DY SI4450DY-T1-GE3
Description MOSFET 60V 7.5A 2.5W MOSFET 60V 7.5A 2.5W 24mohm @ 10V
Is it Rohs certified? incompatible conform to
Maker Vishay Vishay
Reach Compliance Code compliant compliant
Configuration Single Single
Maximum drain current (Abs) (ID) 7.5 A 7.5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 2.5 W 2.5 W
surface mount YES YES
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