UNISONIC TECHNOLOGIES CO.,
2N7002
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
2
1
MOSFET
DESCRIPTION
The UTC
2N7002
has been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product
is particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications
3
SOT-23
FEATURES
* High density cell design for low R
DS(ON)
.
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
*Pb-free plating product number: 2N7002L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
SOURCE
2
GATE
3
DRAIN
MARKING
3P
ORDERING INFORMATION
Order Number
Normal
Lead free
2N7002-AE3-R 2N7002L-AE3-R
Package
SOT-23
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R206-037,B
2N7002
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C unless otherwise noted.)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (R
GS
≤1MΩ)
Gate Source Voltage Continuous
Non Repetitive(tp<50µs)
Maximum Drain
Continuous
Current
Pulsed
Maximum Power Dissipation
Derated above 25°C
Operating Temperature
Storage Temperature
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
P
D
T
OPR
T
STG
RATINGS
60
60
±20
±40
115
800
200
1.6
0 ~ +70
-40 ~ +150
MOSFET
UNIT
V
V
V
mA
mW
mW/°C
°C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction to Ambient
SYMBOL
θ
JA
RATINGS
625
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage, Forward
Gate-Body leakage Reverse
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
Drain-Source On-Voltage
On-State Drain Current
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS (th)
V
DS (ON)
I
D(ON)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
TEST CONDITIONS
V
GS
=0V, I
D
=10µA
V
DS
=60V, V
GS
=0V
T
J
=125°C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
GS
= V
DS
, I
D
=250µA
V
GS
= 10V, I
D
=500mA
V
GS
= 5.0V, I
D
=50mA
V
GS
=10V,V
DS
≥2V
DS(ON)
V
GS
=10V, I
D
=500mA
T
J
=100°C
V
GS
=5.0V, I
D
=50mA
T
J
=100°C
V
DS
≥2V
DS(ON),
I
D
=200mA
V
DS
=25V,V
GS
=0V,f=1.0MHz
MIN
60
0.5
1
100
-100
1
2.1
0.6
0.09
2700
1.2
1.7
1.7
2.4
320
20
11
4
2.5
3.75
1.5
7.5
13.5
7.5
13.5
TYP
MAX
UNIT
V
mA
µA
nA
nA
V
V
mA
Ω
500
80
mS
50
25
5
20
pF
pF
pF
nS
V
DD
=30V, R
L
=150Ω
I
D
=200mA, V
GS
=10V
Turn-On Time
t
ON
R
GEN
=25Ω
V
DD
=30V, R
L
=25Ω
I
D
=200mA, V
GS
=10V
Turn-Off Time
t
OFF
R
GEN
=25Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, Is=115mA (Note )
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Maximum Continuous Drain-Source
Is
Diode Forward Current
Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
20
nS
0.88
1.5
0.8
115
V
A
mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-037,B
2N7002
TEST CIRCUIT AND WAVEFORM
V
DD
MOSFET
R
L
V
IN
D
V
GS
R
GEN
G
S
DUT
V
OUT
Figure 1
t
on
t
d (on)
t
r
90%
t
d(off )
t
off
t
f
90%
Output , V
out
10%
10%
Inverted
90%
Input, V
in
10%
50%
50%
Pulse Width
Figure 2. Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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3
QW-R206-037,B
2N7002
TYPICAL CHARACTERICS
DRAIN - SOURCE CURRENT, I
D
(A)
MOSFET
V
GS
=10V
1.5
8.0V
7.0V
6.0V
NORMALIZED DRAIN–SOURCE
ON–RESISTANCE, R
DS (ON)
2
9.0V
3
2.5
2
1.5
1
0.5
0
0.4
0 .8
V
GS
=4.0V 4.5V
5.0V
6.0V
7.0V
8.0V
9.0V
10V
1
0.5
0
0
1
2
3
4
5.0V
4.0V
3.0V
5
1.2
1.6
2
DRAIN - SOURCE VOLTAGE, V
DS
(V)
Figure 3. On-Region Characteristics
DRAIN CURRENT, I
D
(A)
Figure 4. On-Resistance Varisation with Gate
Voltage and Drain Current
NORMALIZED DRAIN-SOURCE
ON- RESISTANCE , R
DS(ON)
NORMALIZED DRAIN-SOURCE
ON-RESISTANCE, R
DS (ON)
2
1.75
1.5
1.25
1
0.75
0.5
3
V
GS
=10V
I
D
=500mA
2.5
2
1.5
25℃
1
0.5
0
0
0.4
0.8
1.2
1.6
2
DRAIN CURRENT,I
D
(A)
Figure 6. On-Resistance Varisation with Drain
Current and Temperature
V
GS
=10V
T
J
=125℃
- 50
- 25
0
25
50
75
100 125 150
JUCTION TEMPERATURE, T
J
(°C)
Figure 5. On-Resistance Varisation
with Temperature
2
DRAIN CURRENT, I
D
(A)
125℃
NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE, V
th
V
DS
=10V
25℃
1.1
1.05
1
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
V
GS
= V
DS
I
D
= 1mA
1.6
1. 8
1.2
0.4
0
0
2
4
6
8
10
GATE TO SOURCE VOLTAGE , V
GS
(V)
Figure 7. Transfer Characteristics
100 125 150
JUCTION TEMPERATURE, T
J
(°C)
Figure 8. Gate Threshold Varisation
with Temperature
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4
QW-R206-037,B
2N7002
TYPICAL CHARACTERICS (cont.)
REVERSE DRAIN CURRENT, I
S
(A)
NORMALIZED DRAIN-SOURCE
VREAKDOWN VOLTAGE, BV
DSS
1.1
1.075
1.05
1.025
1
0.975
0.95
0.925
-50
-25
0
25
50
75
100 125 150
2
1
0.5
T
J
=125℃
0.1
0.05
0.01
0.005
0.001
0.2
25℃
V
GS
=0V
I
D
= 250μA
MOSFET
0.4
0.6
0.8
1
1.2
1.4
JUCTION TEMPERATURE, T
J
(°C)
Figure 9. Breakdown Voltage Varisation
with Temperature
BODY DIODE FORWARD VOLTAGE , V
SD
(V)
Figure 10. Body Diode Forward Voltage Varisation
with Temperature
GATE-SOURCE VOLTAGE, V
GS
(V)
60
40
CAPACITANCE (pF)
10
8
6
V
DS
= 25V
20
10
5
2
1
1
C
iss
C
oss
I
D
= 500mA
4
2
115 mA
0
0
0.4
0.8
1.2
1.6
2
GATE CHARGE, Qg (nC)
Figure 12. Gate Charge Characteristics
280mA
C
rss
V
GS
=0V
f=1MHz
2
3
5
10
20
30
50
DRAIN TO SOURCE VOLTAGE, V
DS
(V)
Figure 11. Capacitance Characteristics
NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE, r (t)
3
1
0.5
0.2
0.1
0.05
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001 0.001
0.01
0.1
R
θJA
( t)
=r (t)×R
θJA
R
θJA
=(See Datasheet)
P (pk)
t2
T
J
×T
A
=P×R
θJA
(t)
Duty Cycle, D=t1/t2
1
10
100 300
t1
DRAIN CURRENT, I
D
(A)
2
1
0.5
it
i mit
) Lim
( ON
)
L
DS
(ON
R
R
DS
100
μ
s
1m s
10m
s
1s
10s
DC
0.1
0.05
0.01
0.01
0.005
1
V
GS
=0V
SINGLE PULSE
T
A
=25℃
2
5
10
20 30
60 80
DRAIN TO SOURCE VOLTAGE, V
DS
(V)
Figure 13. Maximum Safe Operating Area
t1, TIME (sec)
Figure 14. Transient Thermal Response Curve
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5
QW-R206-037,B
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