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20A

Description
Silicon Rectifier
File Size138KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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20A Overview

Silicon Rectifier

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20A CELL SERIES
硅整流器
Silicon Rectifier
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
I
o
20A
V
RRM
100V~1000V
电极表面高可焊性
Solderable electrode surface
20A CELL
Silicone Rubber
Bottom Electrode
耐正向浪涌电流½力高
High surge forward current capability
½一般单相整流用
General purpose 1 phase
rectifier applications
.087(2.2)
.071(1.8)
■用途
Applications
.279(7.1)
.272(6.9)
Upper Electrode
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values (Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output
Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
正向浪涌电流的平方对电流浪
涌持续
时间的积分值
Current Squared Time
存储温度
Storage Temperature
结温
Junction Temperature
符号
Symbol
V
RRM
I
O
I
FSM
单½
Unit
V
A
A
条件
Conditions
20A
100V 200V400V600V800V1000V
100
200
400
600
20
800
1000
60H
Z
正弦波,电阻负½½,T
a
=50℃
60H
Z
sine wave, R- load, T
a
=50℃
60H
Z
正弦波,一个周期,T
a
=25℃
60H
Z
sine wave, 1 cycle, T
a
=25℃
1ms≤t<8.3ms T
j
=25
,
单个二
极管
1ms≤t
8.3ms T
j
=25
,Rating of
per diode
500
2
It
A
2
s
1042
T
stg
T
j
-55 ~+150
-55 ~+125
■电特性 (T
a=25℃
除非另有规定)
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
参数名称
Item
符号
单½
Symbol Unit
V
FM
I
RRM1
I
RRM2
R
θ
J-A
μA
/W
V
测试条件
Test Condition
I
FM
=20A,脉冲测试,单个二极管的额定值
I
FM
=20A, Pulse measurement, Rating of per diode
T
a
=25℃
V
RM
=V
RRM
T
a
=125℃
结和环境之间
Between junction and ambient
最大值
Max
1.1
5
500
3.8
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
热阻
Thermal Resistance
Document Number 0082
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd. 
www.21yangjie.com
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