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P4SMA13A-H

Description
ESD Suppressors / TVS Diodes 13V 400W UniDir
CategoryDiscrete semiconductor    diode   
File Size404KB,5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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P4SMA13A-H Overview

ESD Suppressors / TVS Diodes 13V 400W UniDir

P4SMA13A-H Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerBourns
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum breakdown voltage13.7 V
Minimum breakdown voltage12.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
GuidelineIEC-61000-4-2, 4-4, 4-5
Maximum repetitive peak reverse voltage11.1 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
IA
N
Features
n
RoHS compliant* and halogen free**
n
Surface Mount SMA package
n
Breakdown Voltage: 6.8 to 550 volts
n
Peak Pulse Power: 400 watts
n
Typical temperature coefficient:
∆V
BR
= 0.1 % x V
BR
@ 25 °C x ∆T
Applications
n
IEC 61000-4-2 ESD (Min. Level 4)
n
IEC 61000-4-4 EFT
n
IEC 61000-4-5 Surge
*R
oH
S
C
OM
PL
T
LE
AD
F
RE
E
P4SMA Transient Voltage Suppressor Diode Series
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AC (SMA)
size format. The Transient Voltage Suppressor series offers a choice of Breakdown Voltages from 6.8 V up to 550 V. Typical fast response
times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Instantaneous Forward Voltage @ 25 A
(For Unidirectional Units Only)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
P4SMA6.8A ~ P4SMA200A
P4SMA220A ~ P4SMA550A
Symbol
P
PK
I
FSM
V
F
T
STG
T
J
Value
400
40
3.5
5.0
-55 to +150
-55 to +150
Unit
Watts
Amps
Volts
°C
°C
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Mounted on 5.0 mm x 5.0 mm copper pad to each terminal.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
How to Order
P4SMA 6.8 CA
Series
P4SMA = SMA/DO-214AC
Breakdown Voltage
6.8 to 550 = 6.8 to 550 VBD (Volts)
Asia-Pacific:
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
EMEA:
Tel: +36 88 520 390
Fax: +36 88 520 211
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
Suffix
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
* RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
**Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br)
and Chlorine (Cl) content is 1500 ppm or less.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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