RN1107MFV datasheet, PDF - EEWORLD Datasheet

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RN1107MFV: DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 10K x 47Kohms; CategoryDiscrete semiconductor The transistor; File Size358KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN1107MFV Overview

Bipolar Transistors - Pre-Biased 100mA 50volts 10K x 47Kohms

RN1107MFV Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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RN1107MFV~RN1109MFV

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

(Bias Resistor built-in Transistor)

RN1107MFV,RN1108MFV,RN1109MFV

0.22 ± 0.05

Unit: mm

1.2 ± 0.05

0.32 ± 0.05

0.80 ± 0.05

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Ultra-small package, suited to very high density mounting

0.8 ± 0.05

Incorporating a bias resistor into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2107MFV to RN2109MFV

1.2 ± 0.05

0.4

0.13 ± 0.05

Equivalent Circuit and Bias Resistor Values

0.5 ± 0.05

Type No.

RN1107MFV

RN1108MFV

RN1109MFV

R1 (kΩ)

R2 (kΩ)

1. BASE

VESM

2. EMITTER

3. COLLECTOR

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1107MFV

to RN1109MFV

RN1107MFV

RN1108MFV

RN1109MFV

RN1107MFV

to RN1109MFV

Symbol

CBO

CEO

EBO

(Note 1)

stg

Rating

100

150

−55

to 150

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

25.4 mm

1.6 mmt)

Pad Dimension（Reference）

0.5

0.45

Unit：mm

1.15

0.4

0.45

0.4

2010-05-12

RN1107MFV Related Products

	RN1107MFV	RN1108MFVTPL3
Description	Bipolar Transistors - Pre-Biased 100mA 50volts 10K x 47Kohms	Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms
Configuration	SINGLE WITH BUILT-IN RESISTOR	Single

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