\"Nitride Wide Bandgap Semiconductor Materials and Electronic Devices\" Author: Hao Yue, Zhang Jinfeng, Zhang Jinben The book includes: basic properties of nitride materials, heteroepitaxial methods and mechanisms, electrical properties of HEMT materials, growth and optimization of AlCaN/GaN and InAlN/GaN heterojunctions, material defect analysis, principle and optimization of GaNHEMT devices, preparation process and performance, electrothermal degradation analysis, GaN enhanced HEMT devices and integrated circuits, GaN MOS-HEMT devices, and finally gives several important directions for future technological development in this field. \"Nitride Wide Bandgap Semiconductor Materials and Electronic Devices\" can be read and referenced by graduate students and researchers in the fields of microelectronics, semiconductor devices and materials.
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