RN1108MFVTPL3 datasheet, PDF - EEWORLD Datasheet

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RN1108MFVTPL3: DescriptionBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms; Categorysemiconductor Discrete semiconductor; File Size358KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms

RN1108MFVTPL3 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor
Product Category	Bipolar Transistors - Pre-Biased
RoHS	Details
Configuration	Single
Transistor Polarity	NPN
Typical Input Resistor	22 kOhms
Typical Resistor Ratio	0.468
Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	80
Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA
Peak DC Collector Current	100 mA
Pd - Power Dissipation	150 mW
Maximum Operating Temperature	+ 150 C
Packaging	Reel
DC Current Gain hFE Max	80
Factory Pack Quantity	8000

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RN1107MFV~RN1109MFV

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

(Bias Resistor built-in Transistor)

RN1107MFV,RN1108MFV,RN1109MFV

0.22 ± 0.05

Unit: mm

1.2 ± 0.05

0.32 ± 0.05

0.80 ± 0.05

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Ultra-small package, suited to very high density mounting

0.8 ± 0.05

Incorporating a bias resistor into the transistor reduces the number of

parts, so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN2107MFV to RN2109MFV

1.2 ± 0.05

0.4

0.13 ± 0.05

Equivalent Circuit and Bias Resistor Values

0.5 ± 0.05

Type No.

RN1107MFV

RN1108MFV

RN1109MFV

R1 (kΩ)

R2 (kΩ)

1. BASE

VESM

2. EMITTER

3. COLLECTOR

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1107MFV

to RN1109MFV

RN1107MFV

RN1108MFV

RN1109MFV

RN1107MFV

to RN1109MFV

Symbol

CBO

CEO

EBO

(Note 1)

stg

Rating

100

150

−55

to 150

JEDEC

―

JEITA

―

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

25.4 mm

1.6 mmt)

Pad Dimension（Reference）

0.5

0.45

Unit：mm

1.15

0.4

0.45

0.4

2010-05-12

RN1108MFVTPL3 Related Products

	RN1108MFVTPL3	RN1107MFV
Description	Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 47Kohms	Bipolar Transistors - Pre-Biased 100mA 50volts 10K x 47Kohms
Configuration	Single	SINGLE WITH BUILT-IN RESISTOR

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