MOSFET LOW POWER_LEGACY
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| Parts packaging code | TO-262AA |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 215 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 650 V |
| Maximum drain current (ID) | 10.6 A |
| Maximum drain-source on-resistance | 0.38 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-262AA |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 29 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IPI65R380C6XKSA1 | IPD65R380C6 | IPB65R380C6 | IPA65R380C6XKSA1 | IPP65R380C6XKSA1 | IPB65R380C6ATMA1 | |
|---|---|---|---|---|---|---|
| Description | MOSFET LOW POWER_LEGACY | Audio Amplifiers | Current Sense Amplifiers Prec 76V Hi-Side Current Sense Amp | MOSFET LOW POWER_LEGACY | MOSFET N-CH 650V 10.6A TO220 | MOSFET N-CH 650V 10.6A TO263 |
| Is it lead-free? | Lead free | Lead free | Lead free | - | Lead free | Contains lead |
| Is it Rohs certified? | conform to | conform to | conform to | - | conform to | conform to |
| Maker | Infineon | Infineon | Infineon | - | Infineon | Infineon |
| Parts packaging code | TO-262AA | TO-252 | D2PAK | - | TO-220AB | D2PAK |
| package instruction | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | - | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 4 | 4 | - | 3 | 4 |
| Reach Compliance Code | compliant | not_compliant | not_compliant | - | compliant | not_compliant |
| Avalanche Energy Efficiency Rating (Eas) | 215 mJ | - | 215 mJ | - | 215 mJ | 215 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 650 V | - | 650 V | - | 650 V | 650 V |
| Maximum drain current (ID) | 10.6 A | - | 10.6 A | - | 10.6 A | 10.6 A |
| Maximum drain-source on-resistance | 0.38 Ω | - | 0.38 Ω | - | 0.38 Ω | 0.38 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-262AA | - | TO-263AB | - | TO-220AB | TO-263AB |
| JESD-30 code | R-PSIP-T3 | - | R-PSSO-G2 | - | R-PSFM-T3 | R-PSSO-G2 |
| JESD-609 code | e3 | - | e3 | - | e3 | e3 |
| Number of components | 1 | - | 1 | - | 1 | 1 |
| Number of terminals | 3 | - | 2 | - | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | - | SMALL OUTLINE | - | FLANGE MOUNT | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | - | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 29 A | - | 29 A | - | 29 A | 29 A |
| Certification status | Not Qualified | - | Not Qualified | - | Not Qualified | Not Qualified |
| surface mount | NO | - | YES | - | NO | YES |
| Terminal surface | Tin (Sn) | - | Matte Tin (Sn) | - | Tin (Sn) | Tin (Sn) |
| Terminal form | THROUGH-HOLE | - | GULL WING | - | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | - | SINGLE | - | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | - | SWITCHING | - | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | - | SILICON | - | SILICON | SILICON |
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