H2N7002SN datasheet, PDF - EEWORLD Datasheet

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H2N7002SN: Description60V 0.2AN channel transistor; CategoryDiscrete semiconductor; File Size115KB，5 Pages; ManufacturerHI-SINCERITY MICROELECTRONICS CORP.

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H2N7002SN Overview

60V 0.2AN channel transistor

Features

Product Name: 60V 0.2AN channel transistor

N-Channel Transistor (60V,0.2A)

Product model: H2N7002SN

Product Description

N-channel enhancement-mode MOS transistor.

parameter:

Channel: N

VDSS voltage: 60V

ID Current: 0.2A

VGS start voltage: ±20V

RDS (on) Max. on-resistance: 5ohm

RDS(on) @VGS : 10V

RDS(on) @ID：0.5A

ESD Protected ：NO

ROSH: PF (lead-free) / HF (halogen-free)

Package：SOT-323

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200605

Issued Date : 2006.02.01

Revised Date : 2006.02.07

Page No. : 1/5

H2N7002SN

N-Channel MOSFET (60V, 0.2A)

H2N7002SN Pin Assignment & Symbol

3-Lead Plastic

SOT-323

Package Code: SN

Pin 1: Gate 2: Source 3: Drain

Description

N-channel enhancement-mode MOS transistor.

Absolute Maximum Ratings

Drain-Source Voltage ............................................................................................................................................ 60 V

Drain-Gate Voltage (R

=1MΩ) ............................................................................................................................. 60 V

Gate-Source Voltage ...........................................................................................................................................

±20

Continuous Drain Current (T

=25°C)

(1)

............................................................................................................. 200 mA

Continuous Drain Current (T

=100°C)

(1)

........................................................................................................... 115 mA

Pulsed Drain Current (T

=25°C)

(2)

.................................................................................................................... 800 mA

Total Power Dissipation (T

=25°C).................................................................................................................. 200 mW

Derate above 25°C .................................................................................................................................. 0.16 mW /

°C

Storage Temperature................................................................................................................................ -55 to 150

°C

Operating Junction Temperature .............................................................................................................. -55 to 150

°C

Lead Temperature, for 10 second Soldering ...................................................................................................... 260

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient................................................................................................... 625

°C

/ W

Electrical Characteristics

=25°C)

Parameter

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate Source Leakage Current, Forward

Gate Source leakage Current, Reverse

Zero Gate Voltage Drain Current

On-State Drain Current

Static Drain-Source On-State Voltage

Symbol

DSS

GS(th)

GSS/F

GSS/R

DSS

D(ON)

DS(ON)

Test Conditions

=0, I

=10uA

=2.5V, I

=0.25mA

=+20V, V

=-20V, V

=60V, V

>2V

DS(ON)

, V

=10V

=50mA, V

=5V

=500mA, V

=10V

=4.5V, I

=75mA

Static Drain-Source On-State Resistance

Forward Transconductance

Turn-on Delay Time

Turn-off Delay Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

DS(ON)

d(on)

d(off)

iss

oss

rss

=25V, V

=0, f=1MHz

=5V, I

=50mA

=10V, I

=500mA

>2V

DS(ON)

, I

=200mA

=50V, R

=250Ω,

=10V, R

=50Ω)

Min

500

Typ.

3.3

2.8

2.3

Max

2.5

100

-100

0.375

3.75

5.3

Unit

Ω

(1)The Power Dissipation of the package may result in a continuous drain current.

(2)Pulse Width≤300us, Duty cycle≥2%.

H2N7002SN

HSMC Product Specification

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