MOSFET LOW POWER_LEGACY
| Parameter Name | Attribute value |
| Product Attribute | Attribute Value |
| Manufacturer | Infineon |
| Product Category | MOSFET |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220FP-3 |
| Packaging | Tube |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Width | 4.85 mm |
| Unit Weight | 0.211644 oz |
| IPA65R380C6XKSA1 | IPD65R380C6 | IPB65R380C6 | IPI65R380C6XKSA1 | IPP65R380C6XKSA1 | IPB65R380C6ATMA1 | |
|---|---|---|---|---|---|---|
| Description | MOSFET LOW POWER_LEGACY | Audio Amplifiers | Current Sense Amplifiers Prec 76V Hi-Side Current Sense Amp | MOSFET LOW POWER_LEGACY | MOSFET N-CH 650V 10.6A TO220 | MOSFET N-CH 650V 10.6A TO263 |
| Is it lead-free? | - | Lead free | Lead free | Lead free | Lead free | Contains lead |
| Is it Rohs certified? | - | conform to | conform to | conform to | conform to | conform to |
| Maker | - | Infineon | Infineon | Infineon | Infineon | Infineon |
| Parts packaging code | - | TO-252 | D2PAK | TO-262AA | TO-220AB | D2PAK |
| package instruction | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | - | 4 | 4 | 3 | 3 | 4 |
| Reach Compliance Code | - | not_compliant | not_compliant | compliant | compliant | not_compliant |
| Avalanche Energy Efficiency Rating (Eas) | - | - | 215 mJ | 215 mJ | 215 mJ | 215 mJ |
| Configuration | - | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | - | - | 650 V | 650 V | 650 V | 650 V |
| Maximum drain current (ID) | - | - | 10.6 A | 10.6 A | 10.6 A | 10.6 A |
| Maximum drain-source on-resistance | - | - | 0.38 Ω | 0.38 Ω | 0.38 Ω | 0.38 Ω |
| FET technology | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | - | - | TO-263AB | TO-262AA | TO-220AB | TO-263AB |
| JESD-30 code | - | - | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 | R-PSSO-G2 |
| JESD-609 code | - | - | e3 | e3 | e3 | e3 |
| Number of components | - | - | 1 | 1 | 1 | 1 |
| Number of terminals | - | - | 2 | 3 | 3 | 2 |
| Operating mode | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | - | SMALL OUTLINE | IN-LINE | FLANGE MOUNT | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | - | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | - | - | 29 A | 29 A | 29 A | 29 A |
| Certification status | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | - | - | YES | NO | NO | YES |
| Terminal surface | - | - | Matte Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) |
| Terminal form | - | - | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | - | - | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | - | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | - | - | SILICON | SILICON | SILICON | SILICON |
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