HiPerFAST
TM
IGBT
IXGH32N60B
V
CES
I
C25
V
CE(sat)
t
fi
=
=
=
=
600 V
60 A
2.5 V
80 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 33
W
Clamped inductive load, L = 100
mH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
60
32
120
I
CM
= 64
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
TO-247 AD
C (TAB)
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
• International standard package
JEDEC TO-247 AD
• High current handling capability
• Newest generation HDMOS
TM
process
• MOS Gate turn-on
- drive simplicity
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
6
g
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
V
V
mA
mA
nA
V
•
•
•
•
•
•
PFC circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
5
200
1
±100
2.5
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
95566B (7/00)
© 2000 IXYS All rights reserved
1-2
IXGH32N60B
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
15
20
2500
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
230
70
125
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 100
mH,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V, L = 100
mH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
23
50
25
30
100
80
0.8
25
35
0.3
120
120
1.4
200
150
1.6
150
35
75
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.62 K/W
0.25
K/W
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
TO-247 AD (IXGH) Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
£
300
ms,
duty cycle
£
2 %
1.5 2.49
IXGH 32N60B characteristic curves are located in the IXGH 32N60BU1 data
sheet.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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