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H2222A

Description
RF SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size22KB,1 Pages
ManufacturerETC
Download Datasheet Parametric Compare View All

H2222A Overview

RF SMALL SIGNAL TRANSISTOR

H2222A Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeRF SMALL SIGNAL
汕头华汕电子器件有限公司
NPN
SILICON
TRANSISTOR
对应½外型号
MPS2222A
H 2222A
█ 主要用途
½音频功率放大,激励级放大、开关应用
█ 外½图及引脚排列
TO-92
█ 极限值
(T
a
=25℃)
T
stg
——贮存温度…………………………………
-55~150℃
T
j
——结温……………………………………………
150
P
C
——集电极耗散功率………………………………625mW
V
CBO
——集电极—基极电压………………………………75V
V
CEO
——集电极—发射极电压……………………………40V
V
E B O
——发射极—基极电压………………………………6V
I
C
——集电极电流………………………………………600mA
1―发射极,E
2―基
极,B
3―集电极,C
█ 电参数
(T
a
=25℃)
参数符号
最小值
典型值
最大值
单 ½
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
f
T
Cob
集电极—基极击穿电压
集电极—发射极击穿电压
发射极—基极击穿电压
集电极—基极截止电流
发射极—基极截止电流
直流电流增益
集电极—发射极饱和电压
特征频率
共基极输出电容
75
40
6
10
10
400
0.3
8
V
V
V
nA
nA
100
300
V
MHz V
CE
=20V, I
C
=20mA
pF
V
CB
=10V,I
E
=0
f=1MHz
I
C
=10μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=60V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=10V, I
C
=150mA
I
C
=150mA, I
B
=15mA

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