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HY5V52F-S

Description
4Banks x 2M x 32bits Synchronous DRAM
Categorystorage    storage   
File Size324KB,13 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
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HY5V52F-S Overview

4Banks x 2M x 32bits Synchronous DRAM

HY5V52F-S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSK Hynix
Parts packaging codeBGA
package instructionTFBGA, BGA90,9X15,32
Contacts90
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B90
length13 mm
memory density268435456 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals90
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX32
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA90,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.4 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width11 mm

HY5V52F-S Related Products

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Description 4Banks x 2M x 32bits Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM

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