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HY5V52FP-H

Description
4Banks x 2M x 32bits Synchronous DRAM
Categorystorage    storage   
File Size324KB,13 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
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HY5V52FP-H Overview

4Banks x 2M x 32bits Synchronous DRAM

HY5V52FP-H Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSK Hynix
Parts packaging codeBGA
package instructionTFBGA, BGA90,9X15,32
Contacts90
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B90
JESD-609 codee1
length13 mm
memory density268435456 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals90
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX32
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA90,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.44 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width11 mm

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