NTD15N06-1 datasheet, PDF - EEWORLD Datasheet

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NTD15N06-1: DescriptionPower MOSFET 15 Amps, 60 Volts; CategoryDiscrete semiconductor The transistor; File Size221KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTD15N06-1 Overview

Power MOSFET 15 Amps, 60 Volts

NTD15N06-1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Manufacturer packaging code	CASE 369D-01
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	61 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	15 A
Maximum drain current (ID)	15 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.5 W
Maximum pulsed drain current (IDM)	45 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

NTD15N06-1 Related Products

	NTD15N06-1	NTD15N06	NTD15N06T4	NTD15N06-001
Description	Power MOSFET 15 Amps, 60 Volts	Power MOSFET 15 Amps, 60 Volts	Power MOSFET 15 Amps, 60 Volts	MOSFET N-CH 60V 15A IPAK
Is it Rohs certified?	incompatible	incompatible	incompatible	-
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor	-
package instruction	IN-LINE, R-PSIP-T3	CASE 369C-01, DPAK-3	CASE 369C-01, DPAK-3	-
Contacts	3	3	3	-
Manufacturer packaging code	CASE 369D-01	CASE 369C-01	CASE 369C-01	-
Reach Compliance Code	compli	_compli	_compli	-
ECCN code	EAR99	EAR99	EAR99	-
Avalanche Energy Efficiency Rating (Eas)	61 mJ	61 mJ	61 mJ	-
Shell connection	DRAIN	DRAIN	DRAIN	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	60 V	60 V	60 V	-
Maximum drain current (Abs) (ID)	15 A	15 A	15 A	-
Maximum drain current (ID)	15 A	15 A	15 A	-
Maximum drain-source on-resistance	0.09 Ω	0.09 Ω	0.09 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	-
JESD-609 code	e0	e0	e0	-
Number of components	1	1	1	-
Number of terminals	3	2	2	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	175 °C	175 °C	175 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	235	240	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	1.5 W	1.5 W	1.5 W	-
Maximum pulsed drain current (IDM)	45 A	45 A	45 A	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	YES	YES	-
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	-
Terminal location	SINGLE	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	30	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	-

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