Power MOSFET 15 Amps, 60 Volts
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | ON Semiconductor |
| package instruction | CASE 369C-01, DPAK-3 |
| Contacts | 3 |
| Manufacturer packaging code | CASE 369C-01 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 61 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 15 A |
| Maximum drain current (ID) | 15 A |
| Maximum drain-source on-resistance | 0.09 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 1.5 W |
| Maximum pulsed drain current (IDM) | 45 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| NTD15N06 | NTD15N06T4 | NTD15N06-1 | NTD15N06-001 | |
|---|---|---|---|---|
| Description | Power MOSFET 15 Amps, 60 Volts | Power MOSFET 15 Amps, 60 Volts | Power MOSFET 15 Amps, 60 Volts | MOSFET N-CH 60V 15A IPAK |
| Is it Rohs certified? | incompatible | incompatible | incompatible | - |
| Maker | ON Semiconductor | ON Semiconductor | ON Semiconductor | - |
| package instruction | CASE 369C-01, DPAK-3 | CASE 369C-01, DPAK-3 | IN-LINE, R-PSIP-T3 | - |
| Contacts | 3 | 3 | 3 | - |
| Manufacturer packaging code | CASE 369C-01 | CASE 369C-01 | CASE 369D-01 | - |
| Reach Compliance Code | _compli | _compli | compli | - |
| ECCN code | EAR99 | EAR99 | EAR99 | - |
| Avalanche Energy Efficiency Rating (Eas) | 61 mJ | 61 mJ | 61 mJ | - |
| Shell connection | DRAIN | DRAIN | DRAIN | - |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V | - |
| Maximum drain current (Abs) (ID) | 15 A | 15 A | 15 A | - |
| Maximum drain current (ID) | 15 A | 15 A | 15 A | - |
| Maximum drain-source on-resistance | 0.09 Ω | 0.09 Ω | 0.09 Ω | - |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | - |
| JESD-609 code | e0 | e0 | e0 | - |
| Number of components | 1 | 1 | 1 | - |
| Number of terminals | 2 | 2 | 3 | - |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| Package form | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | - |
| Peak Reflow Temperature (Celsius) | 235 | 240 | NOT SPECIFIED | - |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| Maximum power dissipation(Abs) | 1.5 W | 1.5 W | 1.5 W | - |
| Maximum pulsed drain current (IDM) | 45 A | 45 A | 45 A | - |
| Certification status | Not Qualified | Not Qualified | Not Qualified | - |
| surface mount | YES | YES | NO | - |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | - |
| Terminal form | GULL WING | GULL WING | THROUGH-HOLE | - |
| Terminal location | SINGLE | SINGLE | SINGLE | - |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 30 | NOT SPECIFIED | - |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | - |
| Transistor component materials | SILICON | SILICON | SILICON | - |
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