VP0550N3-GD559 datasheet, PDF - EEWORLD Datasheet

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VP0550N3-GD559: DescriptionMOSFET 500V 1250hm; Categorysemiconductor Discrete semiconductor; File Size551KB，5 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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VP0550N3-GD559 Overview

MOSFET 500V 1250hm

VP0550N3-GD559 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Microchip
Product Category	MOSFET
RoHS	Details
Technology	Si
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	- 500 V
Rds On - Drain-Source Resistance	125 Ohms
Configuration	Single
Product	MOSFET Small Signal
Transistor Type	1 P-Channel
Factory Pack Quantity	1000

VP0550N3-GD559 Related Products

	VP0550N3-GD559	VP0550N3-P002	VP0550N3-G-P014	VP0550N3-G-P003	VP0550N3-G-P002	VP0550N3-P014	VP0550N3-P003	VP0550N3-P013
Description	MOSFET 500V 1250hm	MOSFET 500V 125Ohm	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET 500V 125Ohm	MOSFET 500V 125Ohm	MOSFET 500V 125Ohm
Manufacturer	Microchip	Microchip	Microchip	Microchip	Microchip	Microchip	Microchip	Microchip
Product Category	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET
RoHS	Details	No	Details	Details	Details	No	N	N
Technology	Si	Si	Si	Si	Si	Si	Si	Si
Number of Channels	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vds - Drain-Source Breakdown Voltage	- 500 V	- 500 V	- 500 V	- 500 V	- 500 V	- 500 V	- 500 V	- 500 V
Rds On - Drain-Source Resistance	125 Ohms	125 Ohms	85 Ohms	85 Ohms	85 Ohms	125 Ohms	125 Ohms	125 Ohms
Configuration	Single	Single	Single	Single	Single	Single	Single	Single
Transistor Type	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel
Factory Pack Quantity	1000	2000	2000	2000	2000	2000	2000	2000
Product	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	-
Mounting Style	-	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	-	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3
Id - Continuous Drain Current	-	- 54 mA	- 54 mA	- 54 mA	- 54 mA	- 54 mA	- 54 mA	- 54 mA
Vgs - Gate-Source Voltage	-	20 V	20 V	20 V	20 V	20 V	20 V	20 V
Minimum Operating Temperature	-	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	-	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C
Channel Mode	-	Enhancement	Enhancement	Enhancement	Enhancement	Enhancement	Enhancement	Enhancement
Fall Time	-	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns
Height	-	5.33 mm	5.33 mm	5.33 mm	5.33 mm	5.33 mm	5.33 mm	5.33 mm
Length	-	5.21 mm	5.21 mm	5.21 mm	5.21 mm	5.21 mm	5.21 mm	5.21 mm
Pd - Power Dissipation	-	1 W	1 W	1 W	1 W	1 W	1 W	1 W
Rise Time	-	15 ns	15 ns	15 ns	15 ns	15 ns	15 ns	15 ns
Typical Turn-Off Delay Time	-	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns
Typical Turn-On Delay Time	-	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns
Width	-	4.19 mm	4.19 mm	4.19 mm	4.19 mm	4.19 mm	4.19 mm	4.19 mm
Unit Weight	-	0.007760 oz	0.016000 oz	0.016000 oz	0.016000 oz	0.007760 oz	0.007760 oz	0.007760 oz

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