VP0550N3-P002 datasheet, PDF - EEWORLD Datasheet

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VP0550N3-P002: DescriptionMOSFET 500V 125Ohm; Categorysemiconductor Discrete semiconductor; File Size551KB，5 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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VP0550N3-P002 Overview

MOSFET 500V 125Ohm

VP0550N3-P002 Parametric

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	Microchip
RoHS	No
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	- 500 V
Id - Continuous Drain Current	- 54 mA
Rds On - Drain-Source Resistance	125 Ohms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement
Fall Time	10 ns
Height	5.33 mm
Length	5.21 mm
Pd - Power Dissipation	1 W
Product	MOSFET Small Signal
Rise Time	15 ns
Factory Pack Quantity	2000
Transistor Type	1 P-Channel
Type	FET
Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	10 ns
Width	4.19 mm
Unit Weight	0.007760 oz

VP0550N3-P002 Related Products

	VP0550N3-P002	VP0550N3-G-P014	VP0550N3-G-P003	VP0550N3-G-P002	VP0550N3-P014	VP0550N3-GD559	VP0550N3-P003	VP0550N3-P013
Description	MOSFET 500V 125Ohm	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET 500V 125Ohm	MOSFET 500V 1250hm	MOSFET 500V 125Ohm	MOSFET 500V 125Ohm
Product Category	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET
Manufacturer	Microchip	Microchip	Microchip	Microchip	Microchip	Microchip	Microchip	Microchip
RoHS	No	Details	Details	Details	No	Details	N	N
Technology	Si	Si	Si	Si	Si	Si	Si	Si
Number of Channels	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vds - Drain-Source Breakdown Voltage	- 500 V	- 500 V	- 500 V	- 500 V	- 500 V	- 500 V	- 500 V	- 500 V
Rds On - Drain-Source Resistance	125 Ohms	85 Ohms	85 Ohms	85 Ohms	125 Ohms	125 Ohms	125 Ohms	125 Ohms
Configuration	Single	Single	Single	Single	Single	Single	Single	Single
Factory Pack Quantity	2000	2000	2000	2000	2000	1000	2000	2000
Transistor Type	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel	1 P-Channel
Mounting Style	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	-	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	-	TO-92-3	TO-92-3
Id - Continuous Drain Current	- 54 mA	- 54 mA	- 54 mA	- 54 mA	- 54 mA	-	- 54 mA	- 54 mA
Vgs - Gate-Source Voltage	20 V	20 V	20 V	20 V	20 V	-	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C	-	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C	-	+ 150 C	+ 150 C
Channel Mode	Enhancement	Enhancement	Enhancement	Enhancement	Enhancement	-	Enhancement	Enhancement
Fall Time	10 ns	10 ns	10 ns	10 ns	10 ns	-	10 ns	10 ns
Height	5.33 mm	5.33 mm	5.33 mm	5.33 mm	5.33 mm	-	5.33 mm	5.33 mm
Length	5.21 mm	5.21 mm	5.21 mm	5.21 mm	5.21 mm	-	5.21 mm	5.21 mm
Pd - Power Dissipation	1 W	1 W	1 W	1 W	1 W	-	1 W	1 W
Product	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal	-
Rise Time	15 ns	15 ns	15 ns	15 ns	15 ns	-	15 ns	15 ns
Typical Turn-Off Delay Time	10 ns	10 ns	10 ns	10 ns	10 ns	-	10 ns	10 ns
Typical Turn-On Delay Time	10 ns	10 ns	10 ns	10 ns	10 ns	-	10 ns	10 ns
Width	4.19 mm	4.19 mm	4.19 mm	4.19 mm	4.19 mm	-	4.19 mm	4.19 mm
Unit Weight	0.007760 oz	0.016000 oz	0.016000 oz	0.016000 oz	0.007760 oz	-	0.007760 oz	0.007760 oz

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