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C8051F930-G-GDI

Description
8-bit Microcontrollers - MCU C8051F930 Bare Die
Categorysemiconductor    The embedded processor and controller   
File Size260KB,15 Pages
ManufacturerSilicon Laboratories
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C8051F930-G-GDI Overview

8-bit Microcontrollers - MCU C8051F930 Bare Die

C8051F930-G-GDI Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerSilicon Laboratories
Product Category8-bit Microcontrollers - MCU
RoHSDetails
Core8051
Factory Pack Quantity1
C8051F930-GDI
Tested Single/Dual Battery, 0.9–3.6 V, 64 kB Flash,
SmaRTClock, 10-Bit ADC MCU Die in Wafer Form
Supply Voltage 0.9 to 3.6 V
-
One-Cell Mode supports 0.9 to 1.8 V operation
-
Two-Cell Mode supports 1.8 to 3.6 V operation
-
Built-in dc-dc converter with 1.8 to 3.3 V output for
-
use in one-cell mode
Built-in LDO regulator allows a high analog supply
voltage and low digital core voltage
2 built-in supply monitors (brownout detectors)
Memory
-
4352 bytes internal data RAM (256+4096)
-
64 kB Flash; In-system programmable in 1024-byte
sectors--1024 bytes are reserved in the 64 kB
devices
-
10-Bit Analog to Digital Converter
-
1
LSB INL; no missing codes
-
Programmable throughput up to 300 ksps
-
23 external inputs
-
On-Chip Voltage Reference
-
On-Chip PGA allows measuring voltages up to twice
-
the reference voltage
16-bit Auto-Averaging Accumulator with Burst Mode
provides increased ADC resolution
Data dependent windowed interrupt generator
Built-in temperature sensor
Digital Peripherals
-
24 port I/O; All 5 V tolerant with high sink current
-
-
-
and programmable drive strength
Hardware SMBus
TM
(I
2
C Compatible), 2 x SPI
TM
,
and UART serial ports available concurrently
Four general purpose 16-bit counter/timer array with
six capture/compare modules and watchdog timer
Hardware SmaRTClock operates down to 0.9V and
requires less than 0.5
A
supply current
-
-
Two Comparators
-
Programmable hysteresis and response time
-
Configurable as wake-up or reset source
-
23 Capacitive Touch Sense inputs
6-Bit Programmable Current Reference
-
Up to
±
500
A.
Can be used as a bias or for gener-
ating a custom reference voltage
Clock Sources
-
Internal oscillators: 24.5 MHz, 2% accuracy sup-
-
-
-
ports UART operation; 20 MHz low power oscillator
requires very little bias current
External oscillator: Crystal, RC, C, or CMOS Clock
SmaRT Clock oscillator: 32 kHz Crystal or internal
self-oscillate mode
Can switch between clock sources on-the-fly; useful
in implementing various power saving modes
On-Chip Debug
-
On-chip debug circuitry facilitates full-speed, non-
-
-
-
High-Speed 8051
C
Core
-
Pipelined instruction architecture; executes 70% of
-
-
instructions in 1 to 2 system clocks
25 MIPS throughput with 25 MHz clock
Expanded interrupt handler
intrusive in-system debug (no emulator required)
Provides breakpoints, single stepping
Inspect/modify memory and registers
Complete development kit
Temperature range: –40 to +85
o
C
Full Technical Data Sheet
-
C8051F93x-C8051F92x
CROSSBAR
EMIF
ANALOG
PERIPHERALS
A
M
U
X
DIGITAL I/O
UART
SMBus
2 x SPI
PCA
Timer 0
Timer 1
Timer 2
Timer 3
CRC
Port 0
10-bit
300 ksps
ADC
+
IREF
Port 1
+
TEMP
SENSOR
VREF
VREG
Port 2
VOLTAGE
COMPARATORS
24.5 MHz PRECISION
INTERNAL OSCILLATOR
External Oscillator
20 MHz LOW POWER
INTERNAL OSCILLATOR
HARDWARE SmaRTClock
HIGH-SPEED CONTROLLER CORE
64 kB
ISP FLASH
FLEXIBLE
INTERRUPTS
8051 CPU
(25 MIPS)
DEBUG
CIRCUITRY
4352 B
SRAM
POR
WDT
Rev. 1.3 11/13
Copyright © 2013 by Silicon Laboratories
C8051F930-GDI
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