Photodiode-Chip
16.05.2008
Wavelength range
Infrared
3350 ±20
Ø3000
EPC-1300-3.0-4
rev. 03
Electrodes
Both on top side
Type
Planar
Technology
InGaAs/InP
typ. dimensions in µm
typ. thickness
330 (±20) µm
Description
Broadband photodiode with
maximum response in the
NIR-region and enhanced
responsivity in the visible
range, no rear side
metalization
3350 ±20
top side*
bond gold 1.0 µm
rear side
no metalization
* Bond pad assigment:
Pos. 1 - Anode
Pos. 2 - Cathode
Applications
Optical communications,
safety equipment, light
barriers
Ø200
Ø150
Miscellaneous Parameters
T
amb
= 25° unless otherwise specified
C,
Parameter
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of I
D
T = -40…120°
C
Test
сonditions
Symbol
A
T
amb
T
stg
T
C
(I
D
)
Value
7.0
-40 to +125
-40 to +125
7.4
Unit
mm²
°
C
°
C
%/K
Optical and Electrical Characteristics
T
amb
= 25° unless otherwise specified
C,
Test
Parameter
conditions
I
F
= 10 mA
Forward voltage
Breakdown voltage
2)
Sensitivity range at 10 %
Spectral bandwidth at 50 %
Responsivity at 1300 nm
1)
Dark current
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
1)
2)
Symbol
V
F
V
R
λ
∆λ
0,5
S
λ
I
D
R
SH
NEP
D*
C
J
Min
Typ
0.6
Max
Unit
V
V
I
R
= 10 µA
V
R
= 0 V
V
R
= 0 V
V
R
= 0 V
V
R
= 5 V
V
R
= 10 mV
λ
= 1300 nm
λ
= 1300 nm
V
R
= 0 V
5
440
680
0.9
5
15
30
5.2x10
-14
5.1x10
12
1000
1300
30
1710
nm
nm
A/W
nA
M
W/ Hz
cm
⋅
Hz
⋅
W
−
1
pF
measured on bare chip on TO-18 header
for information only
Labeling
Type
EPС-1300-3.0-4
Typ. I
D
[nA]
Typ. S
λ
[A/W]
Lot N°
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Photodiode-Chip
16.05.2008
EPC-1300-3.0-4
rev. 03
1 ,2
1 ,0
0 ,8
0 ,6
0 ,4
0 ,2
T y p ic a l O p tic a l R e s p o n s iv ity
Responsivity (A/W)
0 ,0
400
600
800
1000
1200
1400
1600
1800
W a v e le n g th [n m ]
D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re
100
Dark Current [nA]
T
K
= 0 .7 4 % /K
10
1
20
40
60
80
100
120
A m b ie n t T e m p e ra tu re [°C ]
S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T
C
]
Short-Circuit Current
[
arb. units
]
1 ,0 4
1 ,0 2
1 ,0 0
0 ,9 8
0 ,9 6
0 ,9 4
0 ,9 2
0 ,9 0
T
C
(I
S H
) = -0 .3 7 % /K
0
20
40
60
80
100
120
140
A m b ie n t T e m p e ra tu re [°C ]
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
2 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
ST Sensors & Low Power Wireless Technology Forum
京公网安备 11010802033920号
EEWORLD
