DF45112 datasheet, PDF - EEWORLD Datasheet

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DF45112: DescriptionRectifier Diode, 1 Phase, 1 Element, 295A, 1200V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size25KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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DF45112 Overview

Rectifier Diode, 1 Phase, 1 Element, 295A, 1200V V(RRM), Silicon,

DF45112 Parametric

Parameter Name	Attribute value
package instruction	O-XEDB-N2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FAST RECOVERY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2.65 V
JESD-30 code	O-XEDB-N2
Maximum non-repetitive peak forward current	3500 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Maximum output current	295 A
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1200 V
Maximum reverse recovery time	1.22 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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DF45112 Related Products

	DF45112	DF45108	DF45106	DF45116	DF45114	DF45110
Description	Rectifier Diode, 1 Phase, 1 Element, 295A, 1200V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 295A, 800V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 295A, 600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 295A, 1600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 295A, 1400V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 295A, 1000V V(RRM), Silicon,
package instruction	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	2.65 V	2.65 V	2.65 V	2.65 V	2.65 V	2.65 V
JESD-30 code	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2	O-XEDB-N2
Maximum non-repetitive peak forward current	3500 A	3500 A	3500 A	3500 A	3500 A	3500 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	295 A	295 A	295 A	295 A	295 A	295 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1200 V	800 V	600 V	1600 V	1400 V	1000 V
Maximum reverse recovery time	1.22 µs	1.22 µs	1.22 µs	1.22 µs	1.22 µs	1.22 µs
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END	END
Maker	-	Microsemi	-	Microsemi	Microsemi	Microsemi

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