HER305GB0G datasheet, PDF - EEWORLD Datasheet

HER305GB0G: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,; CategoryDiscrete semiconductor diode; File Size374KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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HER305GB0G Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Maximum non-repetitive peak forward current	125 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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