IPU12N03L datasheet, PDF - EEWORLD Datasheet

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IPU12N03L: DescriptionOptiMOS Buck converter series; CategoryDiscrete semiconductor The transistor; File Size144KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IPU12N03L Overview

OptiMOS Buck converter series

IPU12N03L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	TO-251
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.0147 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	82 W
Maximum pulsed drain current (IDM)	120 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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IPD12N03L

IPU12N03L

OptiMOS

Buck converter series

Feature

•

N-Channel

Product Summary

DS(on)

P- TO251 -3-1

10.4

P- TO252 -3-11

mΩ

•

Logic Level

•

Low On-Resistance

DS(on)

•

Excellent Gate Charge x

DS(on)

product (FOM)

•

Superior thermal resistance

•

175°C operating temperature

•

Avalanche rated

•

dv/dt rated

•

Ideal for fast switching buck converters

Type

IPD12N03L

IPU12N03L

Package

P- TO252 -3-11

P- TO251 -3-1

Ordering Code

Q67040-S4342

Q67042-S4043

Marking

12N03L

Maximum Ratings,

= 25 °C, unless otherwise specified

Parameter

Continuous drain current

=25°C

Symbol

Value

Unit

Pulsed drain current

=25°C

D puls

120

Avalanche energy, single pulse

=30A,

=25V,

=25Ω

150

Repetitive avalanche energy, limited by

jmax

Reverse diode dv/dt

=30A,

=24V,

di/dt=200A/µs,

jmax

=175°C

dv/dt

kV/µs

Gate source voltage

Power dissipation

=25°C

tot

±20

100

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

j ,

stg

-55... +175

55/175/56

°C

Page 1

2003-01-17

IPU12N03L Related Products

	IPU12N03L	IPD12N03L
Description	OptiMOS Buck converter series	OptiMOS Buck converter series
Is it Rohs certified?	incompatible	incompatible
Maker	Infineon	Infineon
Parts packaging code	TO-251	TO-252
package instruction	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
Contacts	3	4
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	150 mJ	150 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (Abs) (ID)	30 A	30 A
Maximum drain current (ID)	30 A	30 A
Maximum drain-source on-resistance	0.0147 Ω	0.0147 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251	TO-252
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	82 W	82 W
Maximum pulsed drain current (IDM)	120 A	120 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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