SSW5N80A datasheet, PDF - EEWORLD Datasheet

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SSW5N80A: DescriptionPower Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size354KB，7 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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SSW5N80A Overview

Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

SSW5N80A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	333 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	2.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	140 W
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Advanced Power MOSFET

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 25

µA

(Max.) @ V

= 800V

Low R

DS(ON)

: 1.824

Ω

(Typ.)

SSW/I5N80A

DSS

= 800 V

DS(on)

= 2.2

Ω

= 5 A

-PAK

Absolute Maximum Ratings

Symbol

DSS

dv/dt

, T

STG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (T

=25

)

Continuous Drain Current (T

=100

)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

=25

)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8“ from case for 5-seconds

1. Gate 2. Drain 3. Source

Value

800

3.2

Units

V/ns

+ 30

333

2.0

3.1

140

1.12

- 55 to +150

300

Thermal Resistance

Symbol

Characteristic

Junction-to-Case

Junction-to-Ambient *

Junction-to-Ambient

Typ.

Max.

0.89

62.5

Units

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

SSW5N80A Related Products

	SSW5N80A	SSI5N80A
Description	Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3	Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Is it Rohs certified?	incompatible	incompatible
Maker	Fairchild	Fairchild
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	333 mJ	333 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V	800 V
Maximum drain current (Abs) (ID)	5 A	5 A
Maximum drain current (ID)	5 A	5 A
Maximum drain-source on-resistance	2.2 Ω	2.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	140 W	140 W
Maximum pulsed drain current (IDM)	20 A	20 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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