ILD621/621GB
QUAD CHANNEL
ILQ621/621GB
DUAL CHANNEL
MULTI-CHANNEL PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• Alternate Source to TLP621-2/-4 and
TLP621GB-2/-4
• Current Transfer Ratio (CTR) at I
F
= 5 mA
ILD/Q621: 50% Min.
ILD/Q621GB: 100% Min.
• Saturated Current Transfer Ratio (CTR
SAT
)
at I
F
=1 mA
ILD/Q621: 60% Typ.
ILD/Q621GB: 30% Min.
• High Collector-Emitter Voltage, BV
CEO
=70 V
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
• Isolation Test Voltage from Double Molded
Package, 5300 VAC
RMS
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage .................................................6 V
Forward Current ...........................................60 mA
Surge Current .................................................1.5 A
Power Dissipation.......................................100 mW
Derate from 25
°
C ................................1.33 mW/
°
C
Detector
Collector-Emitter Reverse Voltage ...................70 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms)..........................100 mA
Power Dissipation.......................................150 mW
Derate from 25
°
C .................................... –2 mW/
°
C
Package
Isolation Test Voltage
(t=1 sec.) ......................................... 7500 VAC
PK
(t=1 min.) ....................................... 5300 VAC
RMS
Package Dissipation ILD620/GB............... 400 mW
Derate from 25
°
C ...............................5.33 mW/
°
C
Package Dissipation ILQ620/GB ..............500 mW
Derate from 25
°
C ...............................6.67 mW/
°
C
Creepage ............................................... 7 mm min.
Clearance............................................... 7 min min.
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ...............................
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C .............................
≥
10
11
Ω
Storage Temperature................... –55
°
C to +150
°
C
Operating Temperature ................–55
°
C to +100
°
C
Junction Temperature.................................... 100
°
C
Soldering Temperature
(2 mm from case bottom) .......................... 260
°
C
4°
Typ.
.022 (.56)
.018 (.46)
.790 (20.07)
.779 (19.77 )
Dimensions in inches (mm)
4
3
2
1
Pin One I.D.
.268 (6.81)
.255 (6.48)
Anode
Cathode
5
6
7
8
Cathode
Anode
1
2
3
4
8
7
6
5
Emitter
Collector
Collector
Emitter
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
4°
Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
.305 typ.
(7.75) typ.
10°
Typ.
3°–9°
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
.100 (2.54)
Typ.
Pin One I.D. Anode 1
Cathode 2
Cathode 3
.268 (6.81)
.255 (6.48)
Anode 4
Anode 5
Cathode 6
Cathode
7
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
10 Collector
9
.305 typ.
(7.75) typ.
Emitter
Anode 8
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
10°
Typ.
.135 (3.43)
.115 (2.92)
.100 (2.54)
Typ.
3°–9°
.012 (.30)
.008 (.20)
DESCRIPTION
The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou-
plers that use GaAs IRLED emitters and high gain NPN silicon phototransis-
tors. These devices are constructed using over/under leadframe optical
coupling and double molded insulation technology. This assembly process
offers a withstand test voltage of 7500 VDC.
The ILD/Q621GB is well suited for CMOS interfacing given the CTR
CEsat
of
30% minimum at I
F
of 1 mA. High gain linear operation is guaranteed by a
minimum CTR
CE
of 100% at 5 mA. The ILD/Q621 has a guaranteed CTR
CE
of
50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain
in applications such as power supply feedback circuits, where constant DC
V
IO
voltages are present.
5–1
Characteristics
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Detector
Capacitance
Collector-Emitter Leakage Current
Collector-Emitter Leakage Current
Thermal Resistance, Junction to Lead
Package Transfer Characteristics
Channel/Channel CTR Match
ILD/Q621
Saturated Current Transfer Ratio
Current Transfer Ratio
Collector-Emitter Saturation Voltage
ILD/Q621GB
Saturated Current Transfer Ratio
Current Transfer Ratio (Collector-Emit-
ter)
Collector-Emitter Saturation Voltage
Isolation and Insulation
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Common Mode Coupling Capacitance
Package Capacitance
Insulation Resistance
Channel to Channel Insulation
CMH
CML
C
CM
CI-O
R
S
0.8
10
12
500
5000
5000
0.01
V/
µ
s
V/
µ
s
pF
pF
Ω
VAC
V
IO
=0 V, f=1 MHz
V
IO
=500 V, T
A
=25
°
C
V
CM
=50 V
P-P
, R
L
=1 k
Ω
, I
F
=0 mA
V
CM
=50 V
P-P
, R
L
=1 k
Ω
, I
F
=10
mA
CTR
CEsat
CTR
CE
V
CEsat
30
100
200
600
0.4
%
%
V
I
F
=1 mA, V
CE
=0.4 V
I
F
=5 mA, V
CE
=5 V
I
F
=8 mA, I
CE
=0.2 mA
CTR
CEsat
CTR
CE
V
CEsat
50
60
80
600
0.4
%
%
V
I
F
=1 mA, V
CE
=0.4 V
I
F
=5 mA, V
CE
=5 V
I
F
=8 mA, I
CE
=2.4 mA
CTRX/CTRY
1 to 1
3 to 1
I
F
=5 mA, V
CE
=5 V
C
CE
I
CEO
I
CEO
R
THJL
6.8
10
2
500
100
50
pF
nA
µ
A
°
C/W
V
CE
=5 V, f=1 MHz
V
CE
=24 V
T
A
=85
°
C, V
CE
=24 V
V
F
I
R
C
O
R
THJL
1
1.15
0.01
40
750
1.3
10
V
µ
A
pF
°
C/W
I
F
=10 mA
V
R
=6 V
V
F
=0 V, f=1 MHz
Min.
Typ.
Max.
Unit
Condition
Switching Times
Figure 1. Non-saturated switching timing
I
F
I
F
=10 mA
V
O
F=10 KHz,
DF=50 %
Figure 2. Non-saturated switching timing
V
CC
=5 V
R
L
=75
Ω
t
PHL
V
0
t
PLH
t
S
50%
Characteristic
On Time
Rise Time
Off Time
Symbol
T
ON
t
R
t
OFF
t
F
t
PHL
t
PLH
Typ.
3.0
20
2.3
2.0
1.1
2.5
Unit
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
Test
Condition
I
F
=
±
10 mA
V
CC
=5 V
R
L
=75
Ω
50% of V
PP
t
D
t
R
t
F
Fall Time
Propagation H-L
Propagation L-H
ILD/Q621/GB
5–2
Figure 3. Saturated switching timing
I
F
Figure 6. Maximum LED power dissipation
200
P
LED
- LED Power - mW
150
V
O
t
R
t
D
t
PLH
V
TH
=1.5 V
t
F
100
50
t
PHL
t
S
0
--60
-40
Ta - Ambient Temperature -
°C
-20
0
20
40
60
80
100
Figure 4. Saturated switching timing
F=10 KHz,
DF=50%
V
CC
=5 V
R
L
V
O
I
F
=10 mA
Figure 7. Forward voltage versus forward current
1.4
VF - Forward Voltage - V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
1
10
IF - Forward Current - mA
100
Ta = 85°C
Ta = 25°C
Ta = -55°C
Characteristic
On Time
Rise Time
Off Time
Fall Time
Propagation H-L
Propagation L-H
Symbol
T
ON
t
R
t
OFF
t
F
t
PHL
t
PLH
Typ.
4.3
2.8
2.5
11
2.6
7.2
Unit
µs
µs
µs
µs
µs
µs
Test
Condition
I
F
=± 10 mA
V
CC
=5 V
R
L
=1
Ω
V
TH
=1.5 V
Figure 8. Collector-emitter current versus temperature
and LED current
35
Ice - Collector Current - mA
30
25
20
15
10
5
0
0
10
20
30
40
IF - LED Current - mA
50
60
25°C
85°C
70°C
50°C
Figure 5. Maximum LED current versus ambient
temperature
IF - Maximum LED Current - mA
120
100
80
60
40
20
0
--60
-40
TJ (MAX)=100°C
Ta - Ambient Temperature -
°C
-20
0
20
40
60
80
100
ILD/Q621/GB
5–3
Figure 9. Collector-emitter leakage versus temperature
Iceo - Collector-Emitter - nA
5
10
10 4
10
3
Figure 13. Normalization factor for non-saturated and
saturated CTR T
A
=50°C versus If
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
CTRNF - Normalized CTR Factor
1.5
10 2
10
1
Vce = 10V
TYPICAL
NCTRce
1.0
NCTRce(sat)
0.5
Ta = 50°C
0.0
.1
10 0
10 -1
10 -2
-20
0
20
40
60
80
100
Ta - Ambient Temperature -
°C
1
10
IF - LED Current - mA
100
Figure 10. Propagation delay versus collector load
resistor
tpLH - Propagation Delay -
µs
tpHL - Propagation Delay -
µs
Figure 14. Normalization factor for non-saturated and
saturated CTR T
A
=70°C versus If
2.0
CTRNF - Normalized CTR Factor
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
1000
100
Ta = 25°C, IF =
10mA
Vcc = 5 V,Vth = 1.5
tpHL
V
2.5
1.5
2.0
1.0
NCTRce
10
tpLH
1
.1
1.5
NCTRce(sat)
Ta = 70°C
0.5
1
10
RL - Collector Load Resistor - KΩ
1.0
100
0.0
.1
1
10
IF - LED Current - mA
100
Figure 11. Maximum detector power dissipation
200
P
- Detector Power - mW
DET
Figure 15. Normalization factor for non-saturated and
saturated CTR T
A
=100°C versus If
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25°C
CTRce(sat) Vce = 0.4V
100
CTRNF - Normalized CTR Factor
150
1.5
1.0
NCTRce
50
0.5
NCTRce(sat)
Ta = 100°C
1
10
IF - LED Current - mA
100
0
-60
-40
-20
0
20
40
60
Ta - Ambient Temperature -
°C
80
100
0.0
.1
Figure 12. Maximum collector current versus
collector voltage
1000
Figure 16. Peak LED current versus pulse duration, Tau
10000
τ
Duty Factor
Ice - Collector Current - mA
100
Rth = 500°C/W
If(pk) - Peak LED Current - mA
1000
.005
.01
.02
.05
.1
.2
t
τ
DF = /t
10
1
25°C
50°C
75°C
90°C
100
.5
.1
.1
1
10
Vce - Collector-Emitter Voltage - V
100
10 -6
10
10-5
10-4
10-3
10 -2
10-1
10 0
10 1
t - LED Pulse Duration - s
ILD/Q621/GB
5–4
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