ILQ621GB datasheet, PDF - EEWORLD Datasheet

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ILQ621GB: Description4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER; CategoryLED optoelectronic/LED photoelectric; File Size50KB，4 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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ILQ621GB Overview

4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER

ILQ621GB Parametric

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	DIP-16
Reach Compliance Code	unknown
Other features	UL RECOGNIZED, CMOS COMPATIBLE
Coll-Emtr Bkdn Voltage-Min	70 V
Configuration	SEPARATE, 4 CHANNELS
Nominal current transfer ratio	100%
Maximum dark power	100 nA
Maximum forward current	0.06 A
Maximum insulation voltage	5300 V
Number of components	4
Maximum operating temperature	100 °C
Minimum operating temperature	-55 °C
Optoelectronic device types	TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches	1

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ILD621/621GB

QUAD CHANNEL

ILQ621/621GB

DUAL CHANNEL

MULTI-CHANNEL PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

• Alternate Source to TLP621-2/-4 and

TLP621GB-2/-4

• Current Transfer Ratio (CTR) at I

= 5 mA

ILD/Q621: 50% Min.

ILD/Q621GB: 100% Min.

• Saturated Current Transfer Ratio (CTR

SAT

)

at I

=1 mA

ILD/Q621: 60% Typ.

ILD/Q621GB: 30% Min.

• High Collector-Emitter Voltage, BV

CEO

=70 V

• Dual and Quad Packages Feature:

- Reduced Board Space

- Lower Pin and Parts Count

- Better Channel to Channel CTR Match

- Improved Common Mode Rejection

• Field-Effect Stable by TRIOS (TRansparent

IOn Shield)

• Isolation Test Voltage from Double Molded

Package, 5300 VAC

RMS

• Underwriters Lab File #E52744

• VDE 0884 Available with Option 1

Maximum Ratings

(Each Channel)

Emitter

Reverse Voltage .................................................6 V

Forward Current ...........................................60 mA

Surge Current .................................................1.5 A

Power Dissipation.......................................100 mW

Derate from 25

C ................................1.33 mW/

Detector

Collector-Emitter Reverse Voltage ...................70 V

Collector Current .......................................... 50 mA

Collector Current (t <1 ms)..........................100 mA

Power Dissipation.......................................150 mW

Derate from 25

C .................................... –2 mW/

Package

Isolation Test Voltage

(t=1 sec.) ......................................... 7500 VAC

(t=1 min.) ....................................... 5300 VAC

RMS

Package Dissipation ILD620/GB............... 400 mW

Derate from 25

C ...............................5.33 mW/

Package Dissipation ILQ620/GB ..............500 mW

Derate from 25

C ...............................6.67 mW/

Creepage ............................................... 7 mm min.

Clearance............................................... 7 min min.

Isolation Resistance

=500 V, T

=25

C ...............................

≥

Ω

=500 V, T

=100

C .............................

≥

Ω

Storage Temperature................... –55

C to +150

Operating Temperature ................–55

C to +100

Junction Temperature.................................... 100

Soldering Temperature

(2 mm from case bottom) .......................... 260

4°

Typ.

.022 (.56)

.018 (.46)

.790 (20.07)

.779 (19.77 )

Dimensions in inches (mm)

Pin One I.D.

.268 (6.81)

.255 (6.48)

Anode

Cathode

Anode

Emitter

Collector

Emitter

.390 (9.91)

.379 (9.63)

.045 (1.14)

.030 (.76)

.150 (3.81)

.130 (3.30)

4°

Typ.

.022 (.56)

.018 (.46)

.040 (1.02)

.030 (.76 )

.305 typ.

(7.75) typ.

10°

Typ.

3°–9°

.012 (.30)

.008 (.20)

.135 (3.43)

.115 (2.92)

.100 (2.54)

Typ.

Pin One I.D. Anode 1

Cathode 2

Cathode 3

.268 (6.81)

.255 (6.48)

Anode 4

Anode 5

Cathode 6

Cathode

16 Emitter

15 Collector

14 Collector

13 Emitter

12 Emitter

11 Collector

10 Collector

.305 typ.

(7.75) typ.

Emitter

Anode 8

.045 (1.14)

.030 (.76)

.150 (3.81)

.130 (3.30)

.040 (1.02)

.030 (.76 )

10°

Typ.

.135 (3.43)

.115 (2.92)

.100 (2.54)

Typ.

3°–9°

.012 (.30)

.008 (.20)

DESCRIPTION

The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou-

plers that use GaAs IRLED emitters and high gain NPN silicon phototransis-

tors. These devices are constructed using over/under leadframe optical

coupling and double molded insulation technology. This assembly process

offers a withstand test voltage of 7500 VDC.

The ILD/Q621GB is well suited for CMOS interfacing given the CTR

CEsat

30% minimum at I

of 1 mA. High gain linear operation is guaranteed by a

minimum CTR

of 100% at 5 mA. The ILD/Q621 has a guaranteed CTR

50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain

in applications such as power supply feedback circuits, where constant DC

voltages are present.

5–1

ILQ621GB Related Products

	ILQ621GB	ILD621	ILD621GB	ILQ621
Description	4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER	2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER	2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER	4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
package instruction	DIP-16	DIP-8	DIP-8	DIP-16
Reach Compliance Code	unknown	unknow	unknow	unknow
Other features	UL RECOGNIZED, CMOS COMPATIBLE	UL RECOGNIZED, CMOS COMPATIBLE	UL RECOGNIZED, CMOS COMPATIBLE	UL RECOGNIZED, CMOS COMPATIBLE
Configuration	SEPARATE, 4 CHANNELS	SEPARATE, 2 CHANNELS	SEPARATE, 2 CHANNELS	SEPARATE, 4 CHANNELS
Nominal current transfer ratio	100%	50%	100%	50%
Maximum dark power	100 nA	100 nA	100 nA	100 nA
Maximum forward current	0.06 A	0.06 A	0.06 A	0.06 A
Maximum insulation voltage	5300 V	5300 V	5300 V	5300 V
Number of components	4	2	2	4
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Optoelectronic device types	TRANSISTOR OUTPUT OPTOCOUPLER	TRANSISTOR OUTPUT OPTOCOUPLER	TRANSISTOR OUTPUT OPTOCOUPLER	TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches	1	1	1	-
Coll-Emtr Bkdn Voltage-Mi	-	70 V	70 V	70 V

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