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61AL5233D

Description
RESISTOR, THIN FILM, 0.2W, 0.5%, 50ppm, 523000ohm, SURFACE MOUNT, 0303, CHIP
CategoryPassive components    The resistor   
File Size116KB,2 Pages
ManufacturerSpectrum Microwave
Download Datasheet Parametric View All

61AL5233D Overview

RESISTOR, THIN FILM, 0.2W, 0.5%, 50ppm, 523000ohm, SURFACE MOUNT, 0303, CHIP

61AL5233D Parametric

Parameter NameAttribute value
MakerSpectrum Microwave
package instructionCHIP
Reach Compliance Codeunknown
ECCN codeEAR99
Manufacturer's serial number61
Installation featuresSURFACE MOUNT
Number of terminals2
Maximum operating temperature150 °C
Package shapeRECTANGULAR PACKAGE
method of packingTRAY
Rated power dissipation(P)0.2 W
Rated temperature70 °C
resistance523000 Ω
Resistor typeFIXED RESISTOR
size code0303
surface mountYES
technologyTHIN FILM
Temperature Coefficient50 ppm/°C
Terminal shapeONE SURFACE
Tolerance0.5%
Operating Voltage100 V
Base Number Matches1
T
HIN
F
ILM
C
HIP
R
ESISTORS
61 Series 0.030”x0.030”
Satcon Electronics 61 series .030 x .030 Thin-film Resistor Chips are available in a wide range of resistances and
tolerances. Values are available from 1.25 ohms to 1 megohm. Center-tapped resistors are standard for values up to
500K. Applications include military and industrial hybrids, and medical, aerospace and communications equipment.
61 series resistor chips are available with either passivated nichrome or tantalum-nitride resistor metalization. Nichrome
provides excellent stability and temperature coefficient in hermetic applications while tantalum-nitride provides superior
moisture-resistance for non-hermetic applications.
Electrical Specifications
Parameter
Power Rating
Life
Noise
High Temp Exposure
TCR (61AC, 61AL)
TCR (61ACT)
Operating voltage
Moisture resistance
Thermal shock
Limit
200 mW
+/-0.2% max
-35 dB typ
+/-0.2% max
+/-50 ppm/C
-50 to -120 ppm/C
100 VDC max
+/-0.5% max
+/-0.5% max
Test Conditions
(derated at 70 deg. to 0 mW @ 150 deg.)
1000 hours @ 125 degrees C
MIL-STD-202 method 308
100 hours at 150 degrees C
-55 to 125 degrees C
-55 to 125 degrees C
MIL-STD-202 method 106
MIL-STD-202 method 107
Typical Configurations
Mechanical Specifications
Substrate
Bond pad metalization
Size
Thickness
Bond pad dimensions
Protective overcoat (passivation)
Back side
Silicon with 1 micron thermal oxide
Gold, 100 microinches
.031 x .031 +/-.002 (0.78 x 0.78 mm +/- .05mm)
0.013 +/-.003 (0.33 +/-0.07 mm)
0.004 x .004 minimum (0.1 x 0.1 mm)
0.6 microns SiO2 (61AC&61AL versions only)
Lapped silicon
SatCon Electronics Inc.
Tel: 508-485-6350 Fax : 508-485-5168
165 Cedar Hill Street, Marlborough, Ma 01752
www.satconelectronics.com
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