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FSS130D3

Description
11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size45KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

FSS130D3 Overview

11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

FSS130D3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeTO-257AA
package instructionHERMETIC SEALED, METAL, TO-257AA, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)11 A
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.21 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)33 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

FSS130D3 Related Products

FSS130D3 FSS130R3 FSS130R4 FSS130D1
Description 11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN 11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN 11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN 11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code TO-257AA TO-257AA TO-257AA TO-257AA
package instruction HERMETIC SEALED, METAL, TO-257AA, 3 PIN HERMETIC SEALED, METAL, TO-257AA, 3 PIN HERMETIC SEALED, METAL, TO-257AA, 3 PIN HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Contacts 3 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V 100 V
Maximum drain current (Abs) (ID) 11 A 11 A 11 A 11 A
Maximum drain current (ID) 11 A 11 A 11 A 11 A
Maximum drain-source on-resistance 0.21 Ω 0.21 Ω 0.21 Ω 0.21 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-257AA TO-257AA TO-257AA TO-257AA
JESD-30 code S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL
Package shape SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W 50 W 50 W
Maximum pulsed drain current (IDM) 33 A 33 A 33 A 33 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 -
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