|
FSS130D3 |
FSS130R3 |
FSS130R4 |
FSS130D1 |
Description |
11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
11A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
Maker |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
Parts packaging code |
TO-257AA |
TO-257AA |
TO-257AA |
TO-257AA |
package instruction |
HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
Contacts |
3 |
3 |
3 |
3 |
Reach Compliance Code |
not_compliant |
not_compliant |
not_compliant |
not_compliant |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
Other features |
RADIATION HARDENED |
RADIATION HARDENED |
RADIATION HARDENED |
RADIATION HARDENED |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
100 V |
100 V |
100 V |
100 V |
Maximum drain current (Abs) (ID) |
11 A |
11 A |
11 A |
11 A |
Maximum drain current (ID) |
11 A |
11 A |
11 A |
11 A |
Maximum drain-source on-resistance |
0.21 Ω |
0.21 Ω |
0.21 Ω |
0.21 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code |
TO-257AA |
TO-257AA |
TO-257AA |
TO-257AA |
JESD-30 code |
S-MSFM-P3 |
S-MSFM-P3 |
S-MSFM-P3 |
S-MSFM-P3 |
JESD-609 code |
e0 |
e0 |
e0 |
e0 |
Number of components |
1 |
1 |
1 |
1 |
Number of terminals |
3 |
3 |
3 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
Package body material |
METAL |
METAL |
METAL |
METAL |
Package shape |
SQUARE |
SQUARE |
SQUARE |
SQUARE |
Package form |
FLANGE MOUNT |
FLANGE MOUNT |
FLANGE MOUNT |
FLANGE MOUNT |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
50 W |
50 W |
50 W |
50 W |
Maximum pulsed drain current (IDM) |
33 A |
33 A |
33 A |
33 A |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
NO |
NO |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Terminal form |
PIN/PEG |
PIN/PEG |
PIN/PEG |
PIN/PEG |
Terminal location |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
Base Number Matches |
1 |
1 |
1 |
- |