|
3SK127-YTE85L |
3SK127OTE85R |
3SK127YTE85L |
3SK127-OTE85R |
3SK127-OTE85L |
3SK127-YTE85R |
3SK127YTE85R |
3SK127TE85L |
3SK127OTE85L |
3SK127TE85R |
Description |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
Is it lead-free? |
Contains lead |
Contains lead |
Contains lead |
Contains lead |
Contains lead |
Contains lead |
Contains lead |
Contains lead |
Contains lead |
Contains lead |
Is it Rohs certified? |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
incompatible |
Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
unknown |
Shell connection |
SOURCE |
SOURCE |
SOURCE |
SOURCE |
SOURCE |
SOURCE |
SOURCE |
SOURCE |
SOURCE |
SOURCE |
Configuration |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
Minimum drain-source breakdown voltage |
15 V |
15 V |
15 V |
15 V |
15 V |
15 V |
15 V |
15 V |
15 V |
15 V |
Maximum drain current (ID) |
0.03 A |
0.03 A |
0.03 A |
0.03 A |
0.03 A |
0.03 A |
0.03 A |
0.03 A |
0.03 A |
0.03 A |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) |
0.03 pF |
0.03 pF |
0.03 pF |
0.03 pF |
0.03 pF |
0.03 pF |
0.03 pF |
0.03 pF |
0.03 pF |
0.03 pF |
highest frequency band |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
JESD-30 code |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
R-PDSO-G4 |
JESD-609 code |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
e0 |
Number of components |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
Number of terminals |
4 |
4 |
4 |
4 |
4 |
4 |
4 |
4 |
4 |
4 |
Operating mode |
DUAL GATE, DEPLETION MODE |
DUAL GATE, ENHANCEMENT MODE |
DUAL GATE, ENHANCEMENT MODE |
DUAL GATE, DEPLETION MODE |
DUAL GATE, DEPLETION MODE |
DUAL GATE, DEPLETION MODE |
DUAL GATE, ENHANCEMENT MODE |
DUAL GATE, DEPLETION MODE |
DUAL GATE, ENHANCEMENT MODE |
DUAL GATE, DEPLETION MODE |
Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
125 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
240 |
240 |
240 |
240 |
240 |
240 |
240 |
240 |
240 |
240 |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
YES |
YES |
YES |
YES |
YES |
YES |
YES |
YES |
YES |
YES |
Terminal surface |
TIN LEAD |
TIN LEAD |
TIN LEAD |
TIN LEAD |
TIN LEAD |
TIN LEAD |
TIN LEAD |
TIN LEAD |
TIN LEAD |
TIN LEAD |
Terminal form |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
Terminal location |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
DUAL |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
transistor applications |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
AMPLIFIER |
Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
Base Number Matches |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
package instruction |
SMALL OUTLINE, R-PDSO-G4 |
SMALL OUTLINE, R-PDSO-G4 |
- |
SMALL OUTLINE, R-PDSO-G4 |
SMALL OUTLINE, R-PDSO-G4 |
SMALL OUTLINE, R-PDSO-G4 |
- |
SMALL OUTLINE, R-PDSO-G4 |
SMALL OUTLINE, R-PDSO-G4 |
SMALL OUTLINE, R-PDSO-G4 |
ECCN code |
EAR99 |
- |
- |
EAR99 |
EAR99 |
EAR99 |
- |
EAR99 |
- |
EAR99 |